Spec. No. : HE6842
Issued Date : 1994.07.29
Revised Date : 2002.12.27
Page No. : 1/4
HI-SINCERITY
MICROELECTRONICS CORP.
HMBTA13
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Darlington Amplifier Transistor
SOT-23
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
• Thermal Resistance
Junction To Ambient Rθja............................................................................................ 556 oC/W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 30 V
VCES Collector to Emitter Voltage...................................................................................... 30 V
VEBO Emitter to Base Voltage............................................................................................ 10 V
IC Collector Current........................................................................................................ 300 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCES
BVEBO
ICBO
30
30
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
nA
nA
V
IC=100uA
IC=100uA
IE=10uA
VCB=30V
VEB=10V
IC=100mA, IB=0.1mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA, f=100MHz
VCB=10V, f=1MHz
100
100
1.5
2.0
-
-
-
6
IEBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
-
V
5K
10K
125
-
MHz
pF
Cob
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMBTA13
HSMC Product Specification