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HMBTA13 PDF预览

HMBTA13

更新时间: 2024-01-11 19:39:48
品牌 Logo 应用领域
HSMC 晶体晶体管局域网
页数 文件大小 规格书
4页 35K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

HMBTA13 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
最大集电极电流 (IC):0.3 A配置:DARLINGTON
最小直流电流增益 (hFE):5000最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.35 W
子类别:Other Transistors表面贴装:YES
标称过渡频率 (fT):125 MHzBase Number Matches:1

HMBTA13 数据手册

 浏览型号HMBTA13的Datasheet PDF文件第2页浏览型号HMBTA13的Datasheet PDF文件第3页浏览型号HMBTA13的Datasheet PDF文件第4页 
Spec. No. : HE6842  
Issued Date : 1994.07.29  
Revised Date : 2002.12.27  
Page No. : 1/4  
HI-SINCERITY  
MICROELECTRONICS CORP.  
HMBTA13  
NPN EPITAXIAL PLANAR TRANSISTOR  
Description  
Darlington Amplifier Transistor  
SOT-23  
Absolute Maximum Ratings  
Maximum Temperatures  
Storage Temperature ........................................................................................... -55 ~ +150 °C  
Junction Temperature.................................................................................... +150 °C Maximum  
Maximum Power Dissipation  
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW  
Thermal Resistance  
Junction To Ambient Rθja............................................................................................ 556 oC/W  
Maximum Voltages and Currents (Ta=25°C)  
VCBO Collector to Base Voltage......................................................................................... 30 V  
VCES Collector to Emitter Voltage...................................................................................... 30 V  
VEBO Emitter to Base Voltage............................................................................................ 10 V  
IC Collector Current........................................................................................................ 300 mA  
Characteristics (Ta=25°C)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
BVCBO  
BVCES  
BVEBO  
ICBO  
30  
30  
10  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
nA  
nA  
V
IC=100uA  
IC=100uA  
IE=10uA  
VCB=30V  
VEB=10V  
IC=100mA, IB=0.1mA  
VCE=5V, IC=100mA  
VCE=5V, IC=10mA  
VCE=5V, IC=100mA  
VCE=5V, IC=10mA, f=100MHz  
VCB=10V, f=1MHz  
100  
100  
1.5  
2.0  
-
-
-
6
IEBO  
*VCE(sat)  
VBE(on)  
*hFE1  
*hFE2  
fT  
-
V
5K  
10K  
125  
-
MHz  
pF  
Cob  
*Pulse Test: Pulse Width 380us, Duty Cycle2%  
HMBTA13  
HSMC Product Specification  

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