Spec. No. : HE6840
Issued Date : 1994.07.29
Revised Date : 2002.10.25
Page No. : 1/3
HI-SINCERITY
MICROELECTRONICS CORP.
HMBTA06
NPN SILICON TRANSISTOR
Description
Amplifier Transistor
SOT-23
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 80 V
VCEO Collector to Emitter Voltage...................................................................................... 80 V
VEBO Emitter to Base Voltage.............................................................................................. 4 V
IC Collector Current........................................................................................................ 500 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
80
80
4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
nA
nA
V
IC=100uA
IC=1mA
IE=100uA
VCB=80V
VCE=60V
IC=100mA, IB=10mA
IC=100mA, VCE=1V
IC=10mA, VCE=1V
IC=100mA, VCE=1V
IC=10mA, VCE=2V, f=100MHz
100
100
0.25
1.2
-
ICEO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
-
-
V
50
50
100
-
-
MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMBTA06
HSMC Product Specification