Datasheet > HMBT9014

HMBT9014

更新时间： 2024-01-01 19:21:22

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
5页	50K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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技术参数
数据手册

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HMBT9014 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	0.1 A	配置：	Single
最小直流电流增益 (hFE)：	400	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.225 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	150 MHz	Base Number Matches：	1

HMBT9014 数据手册

Spec. No. : HN200212

Issued Date : 2002.07.01

Revised Date : 2004.09.08

Page No. : 1/5

HI-SINCERITY

MICROELECTRONICS CORP.

HMBT9014

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HMBT9014 is designed for use in pre-amplifier of low level and low noise.

Features

SOT-23

• High Total Power Dissipation (P_D: 225mW)

• Complementary to HMBT9015

• High hFE and Good Linearity

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ........................................................................................................................... -55 ~ +150 °C

Junction Temperature ................................................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (T_A=25°C) ............................................................................................................... 225 mW

• Maximum Voltages and Currents (T_A=25°C)

V_CBOCollector to Base Voltage ........................................................................................................................... 50 V

V_CEOCollector to Emitter Voltage........................................................................................................................ 45 V

V_EBOEmitter to Base Voltage ................................................................................................................................ 5 V

I_CCollector Current........................................................................................................................................ 100 mA

Electrical Characteristics (T_A=25°C)

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Min.

Typ.

Max.

Unit

Test Conditions

I_C=100uA, I_E=0

I_C=1mA, I_B=0

I_E=100uA, I_C=0

V_CB=50V, I_E=0

V_EB=5V, I_C=0

0.3

I_EBO

*V_CE(sat)

*V_BE(sat)

V_BE(on)

*h_FE

0.14

0.84

0.63

280

2.20

270

I_C=100mA, I_B=5mA

V_CE=5V, I_C=2mA

0.58

100

0.7

1000

3.5

V_CE=5V, I_C=1mA

Cob

V_CB=10V, f=1MHz, I_E=0

V_CE=5V, I_C=10mA

f_T

150

MHz

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

Classification on hFE

Rank (Marking Code)

Range

B (C4B)

100-300

C (C4C)

200-600

D (C4D)

400-1000

HMBT9014

HSMC Product Specification

12 3 4 5

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