Spec. No. : HE6849
Issued Date : 1994.07.29
Revised Date : 2002.10.25
Page No. : 1/3
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT5086
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT5086 is designed for low noise , high gain , general
purpose amplifier applications.
SOT-23
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -50 V
VCEO Collector to Emitter Voltage..................................................................................... -50 V
VEBO Emitter to Base Voltage............................................................................................. -3 V
IC Collector Current......................................................................................................... -50 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO1
ICBO2
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
-50
-50
-3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
nA
nA
mV
mV
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-10V
VCB=-35V
IC=-10mA, IB=-1mA
IC=-10mA, IB=-1mA
VCE=-5V, IC=-0.1mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-0.5mA, f=100MHz
VCB=-5V, f=100KHz
-10
-50
-300
-850
500
-
-
150
150
150
40
-
-
-
MHz
pF
4.0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMBT5086
HSMC Product Specification