Datasheet > HMBT468

HMBT468

更新时间： 2024-01-31 03:19:53

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
5页	44K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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技术参数
数据手册

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HMBT468 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	1 A	配置：	Single
最小直流电流增益 (hFE)：	200	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.225 W
子类别：	Other Transistors	表面贴装：	YES

HMBT468 数据手册

Spec. No. : HN200204

Issued Date : 2001.07.01

Revised Date : 2004.09.08

Page No. : 1/5

HI-SINCERITY

MICROELECTRONICS CORP.

HMBT468

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HMBT468 is designed for general purpose low frequency power amplifier

applications.

SOT-23

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ........................................................................................................................... -55 ~ +150 °C

Junction Temperature ..................................................................................................................... 150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (T_A=25°C) ............................................................................................................... 225 mW

• Maximum Voltages and Currents (T_A=25°C)

V_CBOCollector to Base Voltage ........................................................................................................................... 25 V

_CEOCollector to Emitter Voltage........................................................................................................................ 20 V

_EBOEmitter to Base Voltage ................................................................................................................................ 5 V

I_CCollector Current ............................................................................................................................................... 1 A

Electrical Characteristics (T_A=25°C)

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Min.

Typ.

Max.

Unit

Test Conditions

I_C=10uA, I_E=0

I_C=1mA, I_B=0

I_E=10uA, I_C=0

V_CB=20V, I_E=0

*V_CE(sat)

V_BE(on)

*h_FE

500

I_C=0.8A, I_B=80mA

V_CE=2V, I_C=500mA

V_CB=10V, f=1MHz, I_E=0

400

f_T

190

MHz

Cob

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

Classification of hFE

Rank

Range

85-170

120-240

200-400

HMBT468

HSMC Product Specification

12 3 4 5

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