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HMBT4403 PDF预览

HMBT4403

更新时间: 2024-09-24 22:33:35
品牌 Logo 应用领域
HSMC 晶体晶体管局域网
页数 文件大小 规格书
4页 39K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

HMBT4403 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.82
最大集电极电流 (IC):0.6 A配置:Single
最小直流电流增益 (hFE):20最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):0.225 W
子类别:Other Transistors表面贴装:YES
标称过渡频率 (fT):200 MHzBase Number Matches:1

HMBT4403 数据手册

 浏览型号HMBT4403的Datasheet PDF文件第2页浏览型号HMBT4403的Datasheet PDF文件第3页浏览型号HMBT4403的Datasheet PDF文件第4页 
Spec. No. : HE6818  
Issued Date : 1993.06.30  
Revised Date : 2002.10.25  
Page No. : 1/4  
HI-SINCERITY  
MICROELECTRONICS CORP.  
HMBT4403  
PNP EPITAXIAL PLANAR TRANSISTOR  
Description  
The HMBT4403 is designed for general purpose applications  
requiring high breakdown voltages.  
SOT-23  
Absolute Maximum Ratings  
Maximum Temperatures  
Storage Temperature ........................................................................................... -55 ~ +150 °C  
Junction Temperature.................................................................................................... +150 °C  
Maximum Power Dissipation  
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW  
Maximum Voltages and Currents (Ta=25°C)  
VCBO Collector to Base Voltage........................................................................................ -40 V  
VCEO Collector to Emitter Voltage..................................................................................... -40 V  
VEBO Emitter to Base Voltage............................................................................................. -5 V  
IC Collector Current....................................................................................................... -600 mA  
Characteristics (Ta=25°C)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
BVCBO  
BVCEO  
BVEBO  
ICEX  
*VCE(sat)1  
*VCE(sat)2  
*VBE(sat)1  
*VBE(sat)2  
*hFE1  
-40  
-40  
-5  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
nA  
mV  
mV  
mV  
V
IC=-100uA  
IC=-1mA  
IE=-100uA  
-100  
-400  
-750  
-950  
-1.3  
-
VCE=-35V, VBE=-0.4V  
IC=-150mA, IB=-15mA  
IC=-500mA, IB=-50mA  
IC=-150mA, IB=-15mA  
IC=-500mA, IB=-50mA  
VCE=-1V, IC=-0.1mA  
VCE=-1V, IC=-1mA  
VCE=-1V, IC=-10mA  
VCE=-2V, IC=-150mA  
VCE=-2V, IC=-500mA  
VCE=-10V, IC=-20mA, f=100MHz  
VCB=-10V, f=1MHz  
-
-
30  
60  
100  
100  
20  
200  
-
*hFE2  
*hFE3  
*hFE4  
*hFE5  
fT  
Cob  
-
-
300  
-
-
MHz  
pF  
8.5  
*Pulse Test: Pulse Width 380us, Duty Cycle2%  
HMBT4403  
HSMC Product Specification  

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