Spec. No. : HE6814
Issued Date : 1993.06.23
Revised Date : 2002.10.25
Page No. : 1/3
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT3904
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT3904 is designed for general purpose switching amplifier
applications.
SOT-23
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ........................................................................................... -65 ~ +150 °C
Junction Temperature.................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 60 V
VCEO Collector to Emitter Voltage...................................................................................... 40 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current........................................................................................................ 200 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
60
40
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
nA
mV
mV
mV
mV
IC=10uA
IC=1mA
IC=10uA
VCE=30V, VBE=-3V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
VCE=20V, IC=10mA, f=100MHz
VCB=5V, f=1MHz
50
200
300
850
950
-
-
650
-
40
70
100
60
30
300
-
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
-
300
-
-
-
4
MHz
pF
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMBT3904
HSMC Product Specification