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HMBT2907A PDF预览

HMBT2907A

更新时间: 2024-01-31 17:28:44
品牌 Logo 应用领域
HSMC 晶体晶体管开关光电二极管局域网
页数 文件大小 规格书
3页 33K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

HMBT2907A 技术参数

生命周期:Obsolete零件包装代码:SC-59
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:NJESD-30 代码:R-PDSO-G3
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

HMBT2907A 数据手册

 浏览型号HMBT2907A的Datasheet PDF文件第2页浏览型号HMBT2907A的Datasheet PDF文件第3页 
Spec. No. : HE6821  
Issued Date : 1993.06.23  
Revised Date : 2002.10.25  
Page No. : 1/3  
HI-SINCERITY  
MICROELECTRONICS CORP.  
HMBT2907A  
PNP EPITAXIAL PLANAR TRANSISTOR  
Description  
The HMBT2907A is designed for general purpose amplifier and high  
-speed switching, medium power switching applications.  
SOT-23  
Features  
Low Collector Saturation Voltage  
High Speed Switching  
For Complementary Use With NPN Type HMBT2222A  
Absolute Maximum Ratings  
Maximum Temperatures  
Storage Temperature ........................................................................................... -55 ~ +150 °C  
Junction Temperature.................................................................................................... +150 °C  
Maximum Power Dissipation  
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW  
Maximum Voltages and Currents (Ta=25°C)  
VCBO Collector to Base Voltage........................................................................................ -60 V  
VCEO Collector to Emitter Voltage..................................................................................... -60 V  
VEBO Emitter to Base Voltage............................................................................................. -5 V  
IC Collector Current....................................................................................................... -600 mA  
Characteristics (Ta=25°C)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
BVCBO  
BVCEO  
BVEBO  
ICBO  
-60  
-60  
-5  
-
-
-
-
-
-
75  
100  
100  
100  
50  
200  
-
-
-
-
-
-
-
-
V
V
V
nA  
nA  
V
V
V
V
IC=-10uA  
IC=-10mA  
IC=-10uA  
VCB=-50V  
VCE=-30V, VBE=-0.5V  
IC=-150mA, IB=-15mA  
IC=-500mA, IB=-50mA  
IC=-150mA, IB=-15mA  
IC=-500mA, IB=-50mA  
VCE=-10V, IC=-100uA  
VCE=-10V, IC=-1mA  
VCE=-10V, IC=-10mA  
VCE=-10V, IC=-150mA  
VCE=-10V, IC=-500mA  
VCB=-20V, IC=-50mA, f=100MHz  
VCB=-10V, f=1MHz  
-10  
-50  
-0.4  
-1.6  
-1.3  
-2.6  
-
ICEX  
-
*VCE(sat)1  
*VCE(sat)2  
*VBE(sat)1  
*VBE(sat)2  
*hFE1  
-0.2  
-0.5  
-
-
-
-
-
*hFE2  
*hFE3  
*hFE4  
*hFE5  
fT  
Cob  
-
-
180  
300  
-
-
-
-
-
MHz  
pF  
8
*Pulse Test: Pulse Width 380us, Duty Cycle2%  
HMBT2907A  
HSMC Product Specification  

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