Datasheet > HMBD2003S

HMBD2003S

更新时间： 2024-09-24 22:33:35

品牌	Logo	应用领域
HSMC		二极管
页数	文件大小	规格书
2页	23K
描述
General purpose diodes fabricated in planar technology

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HMBD2003S 数据手册

Spec. No. : HE6857

Issued Date : 1994.01.25

Revised Date : 2002.10.25

Page No. : 1/2

HI-SINCERITY

MICROELECTRONICS CORP.

HMBD2003\C\S

Description

The HMBD2003\C\S are general purpose diodes fabricated in planar

technology, and encapsulated in small plastic SMD SOT-23 package.

Features

SOT-23

• Small plastic SMD package

• Switching speed: max. 50 nS

• General application:

Continuous reverse voltage: Max. 200 V

Repetitive peak reverse voltage: Max. 250 V

Repetitive peak forward current: Max. 625 mA

Absolute Maximum Ratings (Ta=25°C)

Characteristic

Symbol

Value

Unit

HMBD2003 Repetitive Peak Reverse Voltage

HMBD2003C Repetitive Peak Reverse Voltage

HMBD2003S Repetitive Peak Reverse Voltage

HMBD2003 Continuous reverse voltage

HMBD2003C Continuous reverse voltage

HMBD2003S Continuous reverse voltage

Forward Continuous Current at Ta=25°C

Repetitive Peak Forward Current at Ta=25°C

Surge Forward Current at t =1mS, Ta=25°C

Power Dissipation

250

200

225

625

VRRM

IFRM

IFSM

°C

250 Max

150

Junction Temperature

Storage Temperature Range

Tstg

-65~+150

°C

Characteristics (Ta=25°C)

Characteristic

Forward Voltage

Symbol

Condition

Min

Max

Unit

VF(1)

VF(2)

IF=100mA

IF=200mA

VR=200V

1.25

100

HMBD2003 Reverse Current

HMBD2003C Reverse Current

HMBD2003S Reverse Current

Total Capacitance

Trr

VR=200V

VR=0V, f=1MHz

IF=30mA to IR=30mA

RL=100Ω measured at

IR=3mA

Reverse Recovery Time

BV_R

IR=100uA

250

HMBD2003, HMBD2003C, HMBD2003S

HSMC Product Specification

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