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HM62V8512BLFP-7 PDF预览

HM62V8512BLFP-7

更新时间: 2024-11-06 22:39:35
品牌 Logo 应用领域
日立 - HITACHI 内存集成电路静态存储器光电二极管
页数 文件大小 规格书
17页 79K
描述
4 M SRAM (512-kword x 8-bit)

HM62V8512BLFP-7 数据手册

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HM62V8512B Series  
4 M SRAM (512-kword × 8-bit)  
ADE-203-905G (Z)  
Rev. 6.0  
Mar. 31, 2000  
Description  
The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density,  
higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The  
device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high  
density mounting. The HM62V8512B is suitable for battery backup system.  
Features  
Single 3.0 V supply: 2.7 V to 3.6 V  
Access time: 70/85 ns (max)  
Power dissipation  
Active: 15 mW/MHz (typ)  
Standby: 3 µW (typ)  
Completely static memory. No clock or timing strobe required  
Equal access and cycle times  
Common data input and output: Three state output  
Directly LV-TTL compatible: All inputs  
Battery backup operation  

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