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HM62V8256BLTSI-10UL PDF预览

HM62V8256BLTSI-10UL

更新时间: 2023-02-26 14:45:00
品牌 Logo 应用领域
日立 - HITACHI 静态存储器光电二极管
页数 文件大小 规格书
16页 102K
描述
STANDARD SRAM, PDSO32, 8 X 13.40 MM, PLASTIC, TSOP1-32

HM62V8256BLTSI-10UL 数据手册

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HM62V8256BI Series  
2 M SRAM (256-kword × 8-bit)  
ADE-203-1004 (Z)  
Preliminary, Rev. 0.0  
Jan. 19, 1999  
Description  
The Hitachi HM62V8256BI Series is 2-Mbit static RAM organized 262,144-kword × 8-bit.  
HM62V8256BI Series has realized higher density, higher performance and low power consumption by  
employing Hi-CMOS process technology. The HM62V8256BI Series offers low power standby power  
dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 32-pin plastic  
TSOPI.  
Features  
Single 3.0 V supply: 2.7 V to 3.6 V  
Access time: 85 ns/100 ns (max)  
Power dissipation  
Active: 15 mW/MHz (typ)  
Standby: 2.4 µW (typ)  
Completely static memory.  
No clock or timing strobe required  
Equal access and cycle times  
Common data input and output  
Three state output  
Directly LV-TTL compatible all inputs  
Battery backup operation  
2 chip selection for battery backup  
Temperature range: –40 to +85°C  

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