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HM628512P-7 PDF预览

HM628512P-7

更新时间: 2024-11-20 04:57:59
品牌 Logo 应用领域
HITACHI-METALS 内存集成电路静态存储器光电二极管
页数 文件大小 规格书
15页 88K
描述
524288-word x 8-bit High Speed CMOS Static RAM

HM628512P-7 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:DIP, DIP32,.6
针数:32Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.78最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PDIP-T32
JESD-609代码:e0长度:41.9 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP32,.6封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified座面最大高度:5.08 mm
最大待机电流:0.002 A最小待机电流:4.5 V
子类别:SRAMs最大压摆率:0.09 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:15.24 mm
Base Number Matches:1

HM628512P-7 数据手册

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HM628512 Series  
524288-word × 8-bit High Speed CMOS Static RAM  
ADE-203-236F (Z)  
Rev. 6.0  
Jun. 9, 1995  
Description  
The Hitachi HM628512 is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes igher density, higher  
performance and low power consumption by employing 0.5 µm Hi-CMOS process technology. The device,  
packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP, is  
available for high density mounting. LP-version is suitable for battery backup system.  
Features  
High speed: Fast access time:  
55/65/70 ns (max)  
Low power  
Standby: 10 µW (typ) (L/L-SL version)  
Operation: 75 mW (typ) (f = 1 MHz)  
Single 5 V supply  
Completely static memory  
No clock or timing strobe required  
Equal access and cycle times  
Common data input and output: Three state output  
Directly TTL compatible: All inputs and outputs  
Capability of battery backup operation (L/L-SL version)  

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