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HM62832UHJP-15TR PDF预览

HM62832UHJP-15TR

更新时间: 2024-11-20 14:42:35
品牌 Logo 应用领域
瑞萨 - RENESAS 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
13页 114K
描述
32KX8 STANDARD SRAM, 15ns, PDSO28, 0.300 INCH, PLASTIC, SOJ-28

HM62832UHJP-15TR 技术参数

生命周期:Obsolete零件包装代码:SOJ
包装说明:SOJ,针数:28
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.46
最长访问时间:15 nsJESD-30 代码:R-PDSO-J28
长度:18.17 mm内存密度:262144 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:3.76 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
宽度:7.62 mmBase Number Matches:1

HM62832UHJP-15TR 数据手册

 浏览型号HM62832UHJP-15TR的Datasheet PDF文件第2页浏览型号HM62832UHJP-15TR的Datasheet PDF文件第3页浏览型号HM62832UHJP-15TR的Datasheet PDF文件第4页浏览型号HM62832UHJP-15TR的Datasheet PDF文件第5页浏览型号HM62832UHJP-15TR的Datasheet PDF文件第6页浏览型号HM62832UHJP-15TR的Datasheet PDF文件第7页 
HM62832UH Series  
256 k High Speed SRAM (32-kword × 8-bit)  
Features  
High speed: Fast access time 15/20 ns (max)  
Low Power  
Standby: 15 µW (typ) (L-version)  
Operation: 675/600 mW (typ)  
Single 5 V supply  
Completely static memory  
No clock or timing strobe required  
Equal access and cycle times  
Common data input and output: Three state output  
Directly TTL compatible: All inputs and outputs  
Ordering Information  
Type No.  
Access Time  
Package  
HM62832UHP-15  
HM62832UHP-20  
15 ns  
20 ns  
300-mil 28-pin plastic DIP (DP-28NA)  
HM62832UHLP-15  
HM62832UHLP-20  
15 ns  
20 ns  
HM62832UHJP-15  
HM62832UHJP-20  
15 ns  
20 n  
300-mil 28-pin plastic SOJ (CP-28DN)  
HM62832UHLJP-15 15 ns  
HM62832UHLJP-20 20 ns  

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