Datasheet > HM5551

HM5551

更新时间： 2024-02-11 03:07:13

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
3页	35K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

HM5551 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.82
Is Samacsys：	N	最大集电极电流 (IC)：	0.6 A
配置：	Single	最小直流电流增益 (hFE)：	30
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	1.2 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

HM5551 数据手册

Spec. No. : HE9507

Issued Date : 1996.04.09

Revised Date : 2002.02.20

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HM5551

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HM5551 is designed for general purpose applications requiring

high breakdown voltages.

SOT-89

Features

• High collector-emitter breakdown voltage. VCEO>160V(@IC=1mA)

• Complements to PNP type HM5401

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature.................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C).................................................................................... 1.2 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ....................................................................................... 180 V

VCES Collector to Emitter Voltage .................................................................................... 160 V

VEBO Emitter to Base Voltage.............................................................................................. 6 V

IC Collector Current ....................................................................................................... 600 mA

Characteristics (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

ICBO

180

160

100

IC=100uA

IC=1mA

IE=10uA

VCB=120V

VEB=4V

IC=10mA, IB=1mA

IC=50mA, IB=5mA

IC=10mA, IB=1mA

IC=50mA, IB=5mA

VCE=5V, IC=1mA

VCE=5V, IC=10mA

VCE=5V, IC=50mA

VCE=10V, IC=10mA, f=100MHz

VCB=10V, f=1MHz

150

200

250

300

IEBO

*VCE(sat)1

*VCE(sat)2

*VBE(sat)1

*VBE(sat)2

*hFE1

*hFE2

*hFE3

Cob

MHz

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

HM5551

HSMC Product Specification

12 3

中文翻译

下载PDF

与HM5551相关器件

型号	品牌	获取价格	描述	数据表
HM55-5173-DT25	RCD	获取价格	Fixed Resistor, Metal Film, 0.2W, 517000ohm, 200V, 0.5% +/-Tol, 25ppm/Cel, Through Hole Mo
HM55-5173-QT25W	RCD	获取价格	Fixed Resistor, Metal Film, 0.2W, 517000ohm, 200V, 0.02% +/-Tol, 25ppm/Cel, Through Hole M
HM55-5173-TT5W	RCD	获取价格	Fixed Resistor, Metal Film, 0.2W, 517000ohm, 200V, 0.01% +/-Tol, 5ppm/Cel, Through Hole Mo
HM55-5230-AB10	RCD	获取价格	Fixed Resistor, Metal Film, 0.2W, 523ohm, 200V, 0.05% +/-Tol, 10ppm/Cel, Through Hole Moun
HM55-5230-TT5	RCD	获取价格	Fixed Resistor, Metal Film, 0.2W, 523ohm, 200V, 0.01% +/-Tol, 5ppm/Cel, Through Hole Mount
HM55-5233-BB5W	RCD	获取价格	RESISTOR, METAL FILM, 0.2W, 0.1%, 5ppm, 523000ohm, THROUGH HOLE MOUNT, AXIAL LEADED, ROHS
HM55-5233-FB5Q	RCD	获取价格	Fixed Resistor, Metal Film, 0.2W, 523000ohm, 200V, 1% +/-Tol, 5ppm/Cel, Through Hole Mount
HM55-5233-QT5	RCD	获取价格	Fixed Resistor, Metal Film, 0.2W, 523000ohm, 200V, 0.02% +/-Tol, 5ppm/Cel, Through Hole Mo
HM55-5300-AT10	RCD	获取价格	Fixed Resistor, Metal Film, 0.2W, 530ohm, 200V, 0.05% +/-Tol, 10ppm/Cel, Through Hole Moun
HM55-5301-BB5Q	RCD	获取价格	Fixed Resistor, Metal Film, 0.2W, 5300ohm, 200V, 0.1% +/-Tol, 5ppm/Cel, Through Hole Mount

产品中心

服务支持

精选活动

关于我们

帮助中心

HM5551

HM5551 技术参数

HM5551 数据手册

与HM5551相关器件

与HM5551相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HM5551

HM5551 技术参数

HM5551 数据手册

与HM5551相关器件

与HM5551相关文章

您还可以找

您在本页遇到什么问题？