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HM5425801B PDF预览

HM5425801B

更新时间: 2024-09-23 22:51:39
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器双倍数据速率
页数 文件大小 规格书
65页 481K
描述
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank/ 16-Mword 】 4-bit 】 4-bank

HM5425801B 数据手册

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HM5425161B Series  
HM5425801B Series  
HM5425401B Series  
256M SSTL_2 interface DDR SDRAM  
143 MHz/133 MHz/125 MHz/100 MHz  
4-Mword × 16-bit × 4-bank/8-Mword × 8-bit × 4-bank/  
16-Mword × 4-bit × 4-bank  
E0086H20 (Ver. 2.0)  
Jan. 23, 2002  
Description  
The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM  
devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high  
speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS) both for read and  
write are available for high speed and reliable data bus design. By setting extended mode resistor, the on-chip  
Delay Locked Loop (DLL) can be set enable or disable.  
Features  
2.5 V power supply  
SSTL-2 interface for all inputs and outputs  
Clock frequency: 143 MHz/133 MHz/125 MHz/100 MHz (max)  
Data inputs, outputs, and DM are synchronized with DQS  
4 banks can operate simultaneously and independently  
Burst read/write operation  
Programmable burst length: 2/4/8  
Burst read stop capability  
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.  

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