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HM5264805FTT-75A PDF预览

HM5264805FTT-75A

更新时间: 2024-10-28 13:08:23
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器PC
页数 文件大小 规格书
65页 498K
描述
Synchronous DRAM, 8MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54

HM5264805FTT-75A 技术参数

生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2,针数:54
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.18
Is Samacsys:N访问模式:FOUR BANK PAGE BURST
最长访问时间:5.4 ns其他特性:AUTO/SELF REFRESH
JESD-30 代码:R-PDSO-G54长度:22.22 mm
内存密度:67108864 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:8功能数量:1
端口数量:1端子数量:54
字数:8388608 words字数代码:8000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:8MX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
认证状态:Not Qualified座面最大高度:1.2 mm
自我刷新:YES最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
宽度:10.16 mmBase Number Matches:1

HM5264805FTT-75A 数据手册

 浏览型号HM5264805FTT-75A的Datasheet PDF文件第2页浏览型号HM5264805FTT-75A的Datasheet PDF文件第3页浏览型号HM5264805FTT-75A的Datasheet PDF文件第4页浏览型号HM5264805FTT-75A的Datasheet PDF文件第5页浏览型号HM5264805FTT-75A的Datasheet PDF文件第6页浏览型号HM5264805FTT-75A的Datasheet PDF文件第7页 
HM5264165F-75/A60/B60  
HM5264805F-75/A60/B60  
HM5264405F-75/A60/B60  
64M LVTTL interface SDRAM  
133 MHz/100 MHz  
1-Mword × 16-bit × 4-bank/2-Mword × 8-bit × 4-bank  
/4-Mword × 4-bit × 4-bank  
PC/133, PC/100 SDRAM  
E0135H10 (Ver. 1.0)  
(Previous ADE-203-940B (Z))  
Apr. 25, 2001  
Description  
The HM5264165F is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The HM5264805F  
is a 64-Mbit SDRAM organized as 2097152-word × 8-bit × 4 bank. The HM5264405F is a 64-Mbit SDRAM  
organized as 4194304-word × 4-bit × 4 bank. All inputs and outputs are referred to the rising edge of the  
clock input. It is packaged in standard 54-pin plastic TSOP II.  
Features  
3.3 V power supply  
Clock frequency: 133 MHz/100 MHz (max)  
LVTTL interface  
Single pulsed RAS  
4 banks can operate simultaneously and independently  
Burst read/write operation and burst read/single write operation capability  
Programmable burst length: 1/2/4/8/full page  
2 variations of burst sequence  
Sequential (BL = 1/2/4/8/full page)  
Interleave (BL = 1/2/4/8)  
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.  

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