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HM5225805BTT-A6 PDF预览

HM5225805BTT-A6

更新时间: 2024-10-26 22:27:59
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器PC
页数 文件大小 规格书
63页 454K
描述
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM

HM5225805BTT-A6 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2, TSOP54,.46,32针数:54
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.24风险等级:5.46
访问模式:FOUR BANK PAGE BURST最长访问时间:6 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):100 MHz
I/O 类型:COMMON交错的突发长度:1,2,4,8
JESD-30 代码:R-PDSO-G54JESD-609代码:e0
长度:22.22 mm内存密度:268435456 bit
内存集成电路类型:SYNCHRONOUS DRAM内存宽度:8
功能数量:1端口数量:1
端子数量:54字数:33554432 words
字数代码:32000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:32MX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP54,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V认证状态:Not Qualified
刷新周期:8192座面最大高度:1.2 mm
自我刷新:YES连续突发长度:1,2,4,8
最大待机电流:0.002 A子类别:DRAMs
最大压摆率:0.22 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

HM5225805BTT-A6 数据手册

 浏览型号HM5225805BTT-A6的Datasheet PDF文件第2页浏览型号HM5225805BTT-A6的Datasheet PDF文件第3页浏览型号HM5225805BTT-A6的Datasheet PDF文件第4页浏览型号HM5225805BTT-A6的Datasheet PDF文件第5页浏览型号HM5225805BTT-A6的Datasheet PDF文件第6页浏览型号HM5225805BTT-A6的Datasheet PDF文件第7页 
HM5225165B-75/A6/B6  
HM5225805B-75/A6/B6  
HM5225405B-75/A6/B6  
256M LVTTL interface SDRAM  
133 MHz/100 MHz  
4-Mword × 16-bit × 4-bank/8-Mword × 8-bit × 4-bank  
/16-Mword × 4-bit × 4-bank  
PC/133, PC/100 SDRAM  
E0082H10 (1st edition)  
(Previous ADE-203-1073B (Z))  
Jan. 31, 2001  
Description  
The HM5225165B is a 256-Mbit SDRAM organized as 4194304-word × 16-bit × 4 bank. The HM5225805B  
is a 256-Mbit SDRAM organized as 8388608-word × 8-bit × 4 bank. The HM5225405B is a 256-Mbit  
SDRAM organized as 16777216-word × 4-bit × 4 bank. All inputs and outputs are referred to the rising edge  
of the clock input. It is packaged in standard 54-pin plastic TSOP II.  
Features  
3.3 V power supply  
Clock frequency: 133 MHz/100 MHz (max)  
LVTTL interface  
Single pulsed RAS  
4 banks can operate simultaneously and independently  
Burst read/write operation and burst read/single write operation capability  
Programmable burst length: 1/2/4/8  
2 variations of burst sequence  
Sequential (BL = 1/2/4/8)  
Interleave (BL = 1/2/4/8)  
Programmable CAS latency: 2/3  
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.  

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