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HM51W17805TT-6 PDF预览

HM51W17805TT-6

更新时间: 2024-10-26 05:36:11
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器
页数 文件大小 规格书
32页 542K
描述
16 M EDO DRAM (2-Mword x 8-bit) 2 k Refresh

HM51W17805TT-6 数据手册

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HM51W17805 Series  
16 M EDO DRAM (2-Mword × 8-bit)  
2 k Refresh  
E0155H10 (Ver. 1.0)  
(Previous ADE-203-631D (Z))  
Jun. 27, 2001  
Description  
The HM51W17805 is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most  
advanced CMOS technology for high performance and low power. The HM51W17805 offers Extended Data  
Out (EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM51W17805 to  
be packaged in standard 28-pin plastic SOJ and 28-pin TSOP.  
Features  
Single 3.3 V (±0.3 V)  
Access time: 50 ns/60 ns/70 ns (max)  
Power dissipation  
Active mode: 396 mW/360 mW/324 mW (max)  
Standby mode : 7.2 mW (max)  
: 0.54 mW (max) (L-version)  
EDO page mode capability  
Long refresh period  
2048 refresh cycles : 32 ms  
: 128 ms (L-version)  
4 variations of refresh  
RAS-only refresh  
CAS-before-RAS refresh  
Hidden refresh  
Self refresh (L-version)  
Battery backup operation (L-version)  
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.  

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