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HM5165405FJ-5 PDF预览

HM5165405FJ-5

更新时间: 2024-11-06 05:36:11
品牌 Logo 应用领域
尔必达 - ELPIDA 存储内存集成电路光电二极管动态存储器
页数 文件大小 规格书
34页 219K
描述
64 M EDO DRAM (16-Mword × 4-bit) 8 k Refresh/4 k Refresh

HM5165405FJ-5 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOJ包装说明:SOJ, SOJ32,.44
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.19Is Samacsys:N
访问模式:FAST PAGE WITH EDO最长访问时间:50 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESHI/O 类型:COMMON
JESD-30 代码:R-PDSO-J32JESD-609代码:e0
长度:20.95 mm内存密度:67108864 bit
内存集成电路类型:EDO DRAM内存宽度:4
功能数量:1端口数量:1
端子数量:32字数:16777216 words
字数代码:16000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:16MX4输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装等效代码:SOJ32,.44封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V认证状态:Not Qualified
刷新周期:4096座面最大高度:3.76 mm
自我刷新:NO最大待机电流:0.0005 A
子类别:DRAMs最大压摆率:0.13 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

HM5165405FJ-5 数据手册

 浏览型号HM5165405FJ-5的Datasheet PDF文件第2页浏览型号HM5165405FJ-5的Datasheet PDF文件第3页浏览型号HM5165405FJ-5的Datasheet PDF文件第4页浏览型号HM5165405FJ-5的Datasheet PDF文件第5页浏览型号HM5165405FJ-5的Datasheet PDF文件第6页浏览型号HM5165405FJ-5的Datasheet PDF文件第7页 
HM5164405F Series  
HM5165405F Series  
64 M EDO DRAM (16-Mword × 4-bit)  
8 k Refresh/4 k Refresh  
E0097H10 (1st edition)  
(Previous ADE-203-1056C (Z))  
Jan. 31, 2001  
Description  
The HM5164405F Series, HM5165405F Series are 64M-bit dynamic RAMs organized as 16,777,216-word  
× 4-bit. They have realized high performance and low power by employing CMOS process technology.  
HM5164405F Series, HM5165405F Series offer Extended Data Out (EDO) Page Mode as a high speed  
access mode. They have the package variation of standard 32-pin plastic SOJ and standard 32-pin plastic  
TSOPII.  
Features  
Single 3.3 V supply: 3.3 V ± 0.3 V  
Access time: 50 ns/60 ns (max)  
Power dissipation  
Active: 396 mW/360 mW (max) (HM5164405F Series)  
: 468 mW/396 mW (max) (HM5165405F Series)  
Standby : 1.8 mW (max) (CMOS interface)  
: 1.1 mW (max) (L-version)  
EDO page mode capability  
Refresh cycles  
RAS-only refresh  
8192 cycles/64 ms (HM5164405F, HM5164405FL)  
4096 cycles/64 ms (HM5165405F, HM5165405FL)  
CBR/Hidden refresh  
4096 cycles/64 ms (HM5164405F, HM5164405FL, HM5165405F, HM5165405FL)  
This product became EOL in December, 2006.  
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.  

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