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HM5113165FTD-6 PDF预览

HM5113165FTD-6

更新时间: 2024-02-15 07:46:59
品牌 Logo 应用领域
尔必达 - ELPIDA 存储内存集成电路光电二极管动态存储器
页数 文件大小 规格书
27页 248K
描述
128M EDO DRAM (8-Mword × 16-bit) 4k refresh

HM5113165FTD-6 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:TSOP2包装说明:TSOP2, TSOP50,.46,32
针数:50Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.64访问模式:EDO PAGE
最长访问时间:60 ns其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型:COMMONJESD-30 代码:R-PDSO-G50
JESD-609代码:e0长度:20.95 mm
内存密度:134217728 bit内存集成电路类型:EDO DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:50
字数:8388608 words字数代码:8000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:8MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP50,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
电源:3.3 V认证状态:Not Qualified
刷新周期:4096座面最大高度:1.2 mm
自我刷新:NO最大待机电流:0.001 A
子类别:DRAMs最大压摆率:0.23 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
宽度:10.16 mmBase Number Matches:1

HM5113165FTD-6 数据手册

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HM5113165FTD-6  
128M EDO DRAM (8-Mword × 16-bit)  
4k refresh  
E0177H10 (Ver. 1.0)  
Jul. 5, 2001  
Description  
The HM5113165F is 128M-bit dynamic RAM organized as 8,388,608-word × 16-bit. It has realized high  
performance and low power by employing CMOS process technology. HM5113165F offers Extended Data  
Out (EDO) Page Mode as a high speed access mode. It is packaged in 50-pin plastic TSOPII.  
Features  
Single 3.3 V supply: 3.3 V ± 0.3 V  
Access time: 60 ns (max)  
Power dissipation  
Active: 828 mW (max)  
Standby : 3.6 mW (max) (CMOS interface)  
EDO page mode capability  
Refresh cycles  
RAS-only refresh  
4096 cycles/64 ms  
CBR/Hidden refresh  
4096 cycles/64 ms  
4 variations of refresh  
RAS-only refresh  
CAS-before-RAS refresh  
Hidden refresh  
2CAS-byte control  
Ordering Information  
Type No.  
Access time  
Package  
HM5113165FTD-6  
60 ns  
400-mil 50-pin plastic TSOP II (TTP-50DE)  
This product became EOL in December, 2006.  
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.  

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