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HM5113165FLTD-6 PDF预览

HM5113165FLTD-6

更新时间: 2024-09-23 05:36:11
品牌 Logo 应用领域
尔必达 - ELPIDA 存储内存集成电路光电二极管动态存储器
页数 文件大小 规格书
31页 265K
描述
128M EDO DRAM (8-Mword × 16-bit) 4k refresh

HM5113165FLTD-6 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2, TSOP50,.46,32
针数:50Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.64Is Samacsys:N
访问模式:FAST PAGE WITH EDO最长访问时间:60 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESHI/O 类型:COMMON
JESD-30 代码:R-PDSO-G50JESD-609代码:e0
长度:20.95 mm内存密度:134217728 bit
内存集成电路类型:EDO DRAM内存宽度:16
功能数量:1端口数量:1
端子数量:50字数:8388608 words
字数代码:8000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:8MX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP50,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V认证状态:Not Qualified
刷新周期:4096座面最大高度:1.2 mm
自我刷新:YES最大待机电流:0.001 A
子类别:DRAMs最大压摆率:0.23 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:MOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

HM5113165FLTD-6 数据手册

 浏览型号HM5113165FLTD-6的Datasheet PDF文件第2页浏览型号HM5113165FLTD-6的Datasheet PDF文件第3页浏览型号HM5113165FLTD-6的Datasheet PDF文件第4页浏览型号HM5113165FLTD-6的Datasheet PDF文件第5页浏览型号HM5113165FLTD-6的Datasheet PDF文件第6页浏览型号HM5113165FLTD-6的Datasheet PDF文件第7页 
HM5113165LTD-6  
128M EDO DRAM (8-Mword × 16-bit)  
4k refresh  
E0178H10 (Ver. 1.0)  
Jul. 12, 2001  
Description  
The HM5113165FL is 128M-bit dynamic RAM organized as 8,388,608-word × 16-bit. It has realized high  
performance and low power by employing CMOS process technology. HM5113165FL offers Extended Data  
Out (EDO) Page Mode as a high speed access mode. It is packaged in 50-pin plastic TSOPII.  
Features  
Single 3.3 V supply: 3.3 V ± 0.3 V  
Access time: 60 ns (max)  
Power dissipation  
Active: 828 mW (max)  
Standby : 1.8 mW (max) (CMOS interface) (L-version)  
EDO page mode capability  
Refresh cycles  
RAS-only refresh  
4096 cycles/64 ms  
CBR/Hidden refresh  
4096 cycles/64 ms  
4 variations of refresh  
RAS-only refresh  
CAS-before-RAS refresh  
Hidden refresh  
Self refresh (L-version)  
This product became EOL in December, 2006.  
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.  

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