Datasheet > HM42

HM42

更新时间： 2024-09-20 22:48:35

品牌	Logo	应用领域
HSMC		晶体连接器晶体管局域网
页数	文件大小	规格书
3页	34K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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HM42 数据手册

Spec. No. : HE9510-B

Issued Date : 1998.04.09

Revised Date : 2000.10.01

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HM42

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HM42 is designed for application as a video output to drive

color CRT, or as a dialer circuit in electronics telephone.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature ................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ...................................................................................... 1 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ...................................................................................... 300 V

VCEO Collector to Emitter Voltage ................................................................................... 300 V

VEBO Emitter to Base Voltage ............................................................................................. 6 V

IC Collector Current ...................................................................................................... 500 mA

(Ta=25°C)

Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

ICBO

300

IC=100uA

IC=1mA

IE=10uA

VCB=260V

VEB=6V

IC=20mA, IB=2mA

VCE=10V, IC=1mA

VCE=10V, IC=10mA

VCE=10V, IC=30mA

VCE=20V, IC=10mA, f=100MHz

VCB=20V

100

500

900

IEBO

*VCE(sat)

*VBE(sat)

*hFE1

*hFE2

*hFE3

MHz

Cob

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HSMC Product Specification

12 3

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