Datasheet > HM3019

HM3019

更新时间： 2024-11-28 22:48:35

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HSMC		晶体晶体管局域网
页数	文件大小	规格书
2页	25K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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HM3019 数据手册

Spec. No. :HE9526-A

Issued Date : 1998.07.01

Revised Date : 2000.10.01

Page No. : 1/2

HI-SINCERITY

MICROELECTRONICS CORP.

HM3019

NPN EPITAXIAL PLANAR TRANSISTOR

Description

This device is designed for use as general purpose amplifier and

switching requiring collector currents 1A

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature ................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ................................................................................... 1.2 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ...................................................................................... 140 V

VCEO Collector to Emitter Voltage ..................................................................................... 80 V

VEBO Emitter to Base Voltage ............................................................................................. 7 V

IC Collector Current.............................................................................................................. 1 A

(Ta=25°C)

Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

ICBO

140

IC=100uA

IC=30mA

IE=100uA

VCB=90V

VEB=5V

IC=150mA, IB=15mA

IC=0.1mA, VCE=10V

IC=10mA, VCE=10V

IC=150mA, VCE=10V

IC=500mA, VCE=10V

IC=1000mA, VCE=10V

IC=50mA, VCE=10V, f=100MHz

VCE=10V, f=1MHz, IE=0

0.2

1.1

IEBO

*VCE(sat)

*VBE(sat)

*hFE1

*hFE2

*hFE3

*hFE4

*hFE5

100

300

MHz

Cob

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HSMC Product Specification

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