Datasheet > HM28

HM28

更新时间： 2024-09-24 22:33:31

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
3页	36K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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HM28 数据手册

Spec. No. : HE6450

Issued Date : 1992.11.25

Revised Date : 2002.04.18

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HM28S

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HM28S is a NPN silicon transistor, designed for use in general-purpose

SPEECH SYNTHSIZER (Voice Rom) IC audio output driver stage amplifier

applications.

TO-92

Features

• Excellent hFE Linearity

• High DC Current Gain

• High Power Dissipation

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ........................................................................................................ -55 ~ +150 °C

Junction Temperature .................................................................................................. 150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C)............................................................................................. 850 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage..................................................................................................... 40 V

VCEO Collector to Emitter Voltage ................................................................................................. 20 V

VEBO Emitter to Base Voltage.......................................................................................................... 6 V

IC Collector Current ..................................................................................................................... 1.25 A

IB Base Current ............................................................................................................................. 0.4 A

Characteristics (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=100uA, IE=0

IC=1mA, IB=0

IE=100uA, IC=0

VCB=35V, IE=0

BVCBO

BVCEO

BVEBO

ICBO

100

0.55

IEBO

VEB=6V, IC=0

*VCE(sat)

*hFE1

*hFE2

hFE3

IC=600mA, IB=20mA

VCE=1V, IC=1mA

VCE=1V, IC=0.1A

VCE=1V, IC=0.3A

VCE=1V, IC=0.5A

VCE=10V, IC=50mA, f=1MHz

VCB=10V, f=1MHz, IE=0

290

300

100

1000

hFE4

Cob

MHz

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

Classification of hFE2

Rank

Range

300-550

500-700

650-1000

HM28S

HSMC Product Specification

12 3

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