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HM1E-65764N-A PDF预览

HM1E-65764N-A

更新时间: 2024-11-07 13:18:11
品牌 Logo 应用领域
TEMIC 静态存储器内存集成电路
页数 文件大小 规格书
2页 85K
描述
Standard SRAM, 8KX8, 55ns, CMOS, CDIP28,

HM1E-65764N-A 技术参数

是否Rohs认证:不符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.77
Is Samacsys:N最长访问时间:55 ns
I/O 类型:COMMONJESD-30 代码:R-GDIP-T28
JESD-609代码:e0内存密度:65536 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端口数量:1
端子数量:28字数:8192 words
字数代码:8000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:8KX8输出特性:3-STATE
可输出:YES封装主体材料:CERAMIC, GLASS-SEALED
封装代码:DIP封装等效代码:DIP28,.6
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL电源:5 V
认证状态:Not Qualified最大待机电流:0.02 A
最小待机电流:4.5 V子类别:SRAMs
最大压摆率:0.125 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUALBase Number Matches:1

HM1E-65764N-A 数据手册

 浏览型号HM1E-65764N-A的Datasheet PDF文件第2页 

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