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HM065798N-2/883 PDF预览

HM065798N-2/883

更新时间: 2024-01-20 17:54:27
品牌 Logo 应用领域
TEMIC 静态存储器内存集成电路
页数 文件大小 规格书
7页 85K
描述
Standard SRAM, 64KX4, 55ns, CMOS,

HM065798N-2/883 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.67最长访问时间:55 ns
JESD-30 代码:R-XUUC-N24内存密度:262144 bit
内存集成电路类型:STANDARD SRAM内存宽度:4
功能数量:1端口数量:1
端子数量:24字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:64KX4输出特性:3-STATE
可输出:NO封装主体材料:UNSPECIFIED
封装代码:DIE封装形状:RECTANGULAR
封装形式:UNCASED CHIP并行/串行:PARALLEL
认证状态:Not Qualified标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:NO LEAD
端子位置:UPPERBase Number Matches:1

HM065798N-2/883 数据手册

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MATRA MHS  
HM 65798  
64 K × 4 High Speed CMOS SRAM  
Introduction  
The HM 65798 is a high speed CMOS static RAM Easy memory expansion is provided by an active low chip  
organized as 65,536 × 4 bit. It is manufactured using MHS select (CS) and three state drivers.  
high performance CMOS technology.  
All inputs and outputs of the HM 65798 are TTL  
Access times as fast 20 ns are available with maximum compatible and operate from single 5 V supply thus  
power consumption of only 770 mW.  
simplifying system design.  
The HM 65798 features fully static operation requiring no The HM 65798 is 100 % processed following the test  
external clocks or timing strobes. The automatic methods of MIL STD 883 and/or ESA/SCL 9000, making  
power-down feature reduces the power consumption by ideally suitable for military/space applications that  
71 % when the circuit is deselected.  
demand superior levels of performance and reliability.  
Features  
D Fast access time  
D Wide temperature range : –55°C to + 125°C  
D 300 mils width package  
Commercial/industrial : 20/25/35/45/55 ns (max)  
Military : 25/35/45/55 ns (max)  
D Low power consumption  
Active : 770 mW  
D TTL compatible inputs and outputs  
D Asynchronous  
D Capable of withstanding greater than 2000V electrostatic  
discharge single 5 volt supply  
Standby : 220 mW  
Interface  
Block Diagram  
Rev. C (21/12/94)  
1

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