Datasheet > HL6364DG

HL6364DG

更新时间： 2024-11-04 03:42:07

品牌	Logo	应用领域
OPNEXT		光电二极管激光二极管
页数	文件大小	规格书
4页	94K
描述
Low Operating Current Visible Laser Diode

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技术参数
数据手册

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HL6364DG 技术参数

生命周期：	Transferred	包装说明：	LD/DG, 3 PIN
Reach Compliance Code：	unknown	风险等级：	5.02
Is Samacsys：	N	配置：	SINGLE WITH BUILT-IN PHOTO DIODE
功能数量：	1	最高工作温度：	50 °C
最低工作温度：	-10 °C	光电设备类型：	LASER DIODE
标称输出功率：	65 mW	峰值波长：	642 nm
形状：	ROUND	尺寸：	1.6 mm
最大阈值电流：	80 mA	Base Number Matches：	1

HL6364DG 数据手册

HL6364DG/65DG

Low Operating Current Visible Laser Diode

ODE-208-060B (Z)

Rev.2

Oct. 17, 2006

Description

The HL6364DG/65DG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are

suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

Features

Package Type

• HL6364DG/65DG: DG

Internal Circuit

• HL6364DG

Internal Circuit

• HL6365DG

•

Visible light output

Single longitudinal mode

: 642 nm Typ

Optical output power : 60 mW CW

Low operating current : 125 mA Typ

Low operating voltage : 2.7 V Max

Operating temperature : +50°C

TE mode oscillation

Absolute Maximum Ratings

(T_C= 25°C)

Item

Optical output power

LD reverse voltage

Symbol

Ratings

Unit

P_O

V_R(LD)

PD reverse voltage

Operating temperature

Storage temperature

V_R(PD)

Topr

Tstg

–10 to +50

–40 to +85

°C

Optical and Electrical Characteristics

(T_C= 25°C)

Item

Threshold current

Operating current

Operating voltage

Symbol

Ith

Min

—

Typ

Max

Unit

Test Condition

155

2.7

—

I_OP

V_OP

θ//

125

2.5

P_O= 60 mW

Beam divergence

parallel to the junction

Beam divergence

θ⊥

P_O= 60 mW

perpendicular to the junction

Lasing wavelength

Monitor current

λp

635

0.2

642

0.4

645

0.8

P_O= 60 mW

I_S

P_O= 60 mW, V_R(PD)= 5 V

Rev.2 Oct. 17, 2006 page 1 of 4

12 3 4

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