Datasheet > HJ772

HJ772

更新时间： 2024-11-07 22:33:31

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
4页	47K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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数据手册

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HJ772 数据手册

Spec. No. : HE6015

Issued Date : 1996.04.12

Revised Date : 2003.01.07

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

HJ772

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HJ772 is designed for using in output stage of 20 W audio amplifier,

voltage regulator, DC-DC converter and relay driver.

Absolute Maximum Ratings (Ta=25°C)

TO-252

• Maximum Temperatures

Storage Temperature ........................................................................................................ -55 ~ +150 °C

Junction Temperature ................................................................................................................ +150 °C

• Maximum Power Dissipation

Total Power Dissipation (Tc=25°C)................................................................................................. 10 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage ................................................................................................. -40 V

BVCEO Collector to Emitter Voltage.............................................................................................. -30 V

BVEBO Emitter to Base Voltage ...................................................................................................... -5 V

IC Collector Current (DC)................................................................................................................. -3 A

IC Collector Current (Pulse)............................................................................................................. -7 A

IB Base Current (DC)................................................................................................................ -600 mA

Thermal Characteristic

Characteristic

Symbol

Max.

12.5

Unit

^oC/W

Thermal Resistance, junction to case

Rθjc

Characteristics (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

ICBO

-40

-30

-5

100

IC=-100uA, IE=0

IC=-1mA, IB=0

IE=-10uA, IC=0

VCB=-30V, IE=0

VEB=-3V, IC=0

IC=-2A, IB=-0.2A

VCE=-2V, IC=-20mA

VCE=-2V, IC=-1A

-1

-0.5

-2

500

IEBO

*VCE(sat)

*VBE(sat)

*hFE1

*hFE2

-0.3

-1

MHz

VCE=-5V, IC=-0.1A, f=100MHz

VCB=-10V, f=-1MHz, IE=0

Cob

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

Classification Of hFE1

Rank

Range

100-200

160-320

250-500

HJ772

HSMC Product Specification

12 3 4

中文翻译

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