Datasheet > HJ6668

HJ6668

更新时间： 2024-11-07 22:33:31

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
3页	34K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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中文翻译

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技术参数
数据手册

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HJ6668 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

HJ6668 数据手册

Spec. No. : Preliminary Data

Issued Date : 1999.03.01

Revised Date : 2000.11.01

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HJ6668

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HJ6668 is designed for general-purpose amplifier and switching

applications.

Absolute Maximum Ratings (Ta=25°C)

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature ................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25°C) .................................................................................... 65 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage..................................................................................... -80 V

BVCEO Collector to Emitter Voltage.................................................................................. -80 V

BVEBO Emitter to Base Voltage.......................................................................................... -5 V

IC Collector Current........................................................................................................... -10 A

Characteristics (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

IEBO

ICEO

ICEV

*VCE(sat)1

*VCE(sat)2

*VBE(on)1

*VBE(on)2

*hFE1

-80

IC=-10mA

IC=-200mA

VEB=-5V

VCE=-80V

VCE=-80V, VBE(off)=-1.5V

IC=-5A, IB=-10mA

IC=-10A, IB=-100mA

IC=-5A, VCE=-3V

IC=-10A, VCE=-3V

IC=-5A, VCE=-3V

IC=-10A, VCE=-3V

-100

-1

-300

-2

-3

-2.8

-4.5

100

*hFE2

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HSMC Product Specification

12 3

中文翻译

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