Datasheet > HJ649A

HJ649A

更新时间： 2024-09-19 22:33:31

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
3页	30K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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数据手册

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HJ649A 数据手册

Spec. No. : HE6830

Issued Date : 1994.01.25

Revised Date : 2002.04.03

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HJ649A

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HJ649A is designed for low frequency power amplifier.

TO-252

Absolute Maximum Ratings (Ta=25°C)

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature.................................................................................................... +150 °C

• Maximum Power Dissipation

Total Power Dissipation (Tc=25°C) ..................................................................................... 20 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage.................................................................................... -180 V

BVCEO Collector to Emitter Voltage................................................................................. -160 V

BVEBO Emitter to Base Voltage........................................................................................... -5 V

IC Collector Current........................................................................................................... -1.5 A

Characteristics (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

ICBO

*VCE(sat)

*VBE(on)

*hFE1

*hFE2

-180

-160

-5

IC=-1mA

IC=-10mA

IE=-1mA

-10

-1

-1.5

200

VCB=-160V

IC=-500mA, IB=-50mA

VCE=-5V,IC=-150mA

VCE=-5V,IC=-500mA

VCE=-5V, IC=-150mA

VCB=-10V, f=1MHz, IE=0

140

MHz

Cob

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

Classification Of hFE1

Rank

Range

60-120

100-200

HJ649A

HSMC Product Specification

12 3

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