Datasheet > HJ50

HJ50

更新时间： 2024-09-19 22:33:31

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
3页	34K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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HJ50 数据手册

Spec. No. : HE6016

Issued Date : 1996.04.12

Revised Date : 2002.02.26

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HJ50

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HJ50 is designed for line operated audio output amplifier switch

mode power supply drivers and other switching applications.

TO-252

Absolute Maximum Ratings (Ta=25°C)

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature.................................................................................................... +150 °C

• Maximum Power Dissipation

Total Power Dissipation (Tc=25°C) ..................................................................................... 15 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage..................................................................................... 500 V

BVCEO Collector to Emitter Voltage.................................................................................. 400 V

BVEBO Emitter to Base Voltage............................................................................................ 5 V

IC Collector Current .............................................................................................................. 1 A

Characteristics (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

ICES

ICEO

IEBO

*VCE(sat)

*VBE(on)

*hFE1

*hFE2

500

400

IC=1mA

IC=30mA

IC=100uA

VCE=500V

VCE=300V

100

200

VEB=5V

IC=1A, IB=0.2A

VCE=10V, IC=1A

VCE=10V, IC=0.3A

VCE=10V, IC=1A

VCE=10V, IC=200mA, f=2MHz

1.5

150

MHz

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

HJ50

HSMC Product Specification

12 3

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