Datasheet > HJ41C

HJ41C

更新时间： 2024-09-19 03:41:55

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
4页	51K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HJ41C 数据手册

Spec. No. : HE6010

Issued Date : 1996.02.14

Revised Date : 2005.07.14

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

HJ41C

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HJ41C is designed for use in general purpose amplifier and switching

applications.

TO-252

Absolute Maximum Ratings (T_A=25°C)

• Maximum Temperatures

Storage Temperature ........................................................................................................................... -55 ~ +150 °C

Junction Temperature .................................................................................................................................... +150 °C

• Maximum Power Dissipation

Total Power Dissipation (T_C=25°C).................................................................................................................... 20 W

• Maximum Voltages and Currents

BV_CBOCollector to Base Voltage....................................................................................................................... 100 V

BV_CEOCollector to Emitter Voltage.................................................................................................................... 100 V

BV_EBOEmitter to Base Voltage.............................................................................................................................. 5 V

I_CCollector Current................................................................................................................................................ 6 A

Electrical Characteristics (T_A=25°C)

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CES

Min.

Typ.

Max.

Unit

Test Conditions

100

I_C=1mA, I_E=0

I_C=30mA, I_B=0

I_C=1mA, I_C=0

100

500

1.5

V_CE=100V, V_EB=0

I_CEO

V_CE=60V, I_B=0

I_EBO

V_EB=5V, I_C=0

*V_CE(sat)

V_BE(on)

*h_FE1

*h_FE2

f_T

I_C=6A, I_B=600mA

V_CE=4V, I_C=6A

V_CE=4V, I_C=300mA

V_CE=4V, I_C=3A

MHz

V_CE=10V, I_C=500mA, f=1MHz

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

HJ41C

HSMC Product Specification

12 3 4

中文翻译

下载PDF

与HJ41C相关器件

型号	品牌	获取价格	描述	数据表
HJ-42005	CRANE	获取价格	10 MHz - 500 MHz RF/MICROWAVE SPLITTER, 0.65 dB INSERTION LOSS
HJ42C	HSMC	获取价格	PNP EPITAXIAL PLANAR TRANSISTOR
HJ-43003	CRANE	获取价格	10 MHz - 500 MHz RF/MICROWAVE SPLITTER, 0.75 dB INSERTION LOSS
HJ443HLP	HAMMOND	获取价格	DATA SUBJECT TO CHANGE WITHOUT NOTLCE
HJ444HLP	HAMMOND	获取价格	DATA SUBJECT TO CHANGE WITHOUT NOTLCE
HJ44H11	HSMC	获取价格	NPN EPITAXIAL PLANAR TRANSISTOR
HJ44H11	UTC	获取价格	NPN EPITAXIAL PLANAR TRANSISTOR
HJ44H11_15	UTC	获取价格	NPN EPITAXIAL PLANAR TRANSISTOR
HJ44H11G-AA3-R	UTC	获取价格	NPN EPITAXIAL PLANAR TRANSISTOR
HJ44H11G-TA3-T	UTC	获取价格	NPN EPITAXIAL PLANAR TRANSISTOR