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HJ122 PDF预览

HJ122

更新时间: 2024-09-14 22:33:31
品牌 Logo 应用领域
HSMC 晶体晶体管局域网
页数 文件大小 规格书
4页 35K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

HJ122 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
最大集电极电流 (IC):5 A配置:DARLINGTON
最小直流电流增益 (hFE):100最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):20 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

HJ122 数据手册

 浏览型号HJ122的Datasheet PDF文件第2页浏览型号HJ122的Datasheet PDF文件第3页浏览型号HJ122的Datasheet PDF文件第4页 
Spec. No. : HE6009  
Issued Date : 1996.02.03  
Revised Date : 2002.08.13  
Page No. : 1/4  
HI-SINCERITY  
MICROELECTRONICS CORP.  
HJ122  
NPN EPITAXIAL PLANAR TRANSISTOR  
Description  
The HJ122 is designed for use in general purposes and low speed  
switching applications.  
TO-252  
Features  
High DC current gain  
Built-in a damper diode at E-C  
Absolute Maximum Ratings (Ta=25°C)  
Maximum Temperatures  
Storage Temperature............................................................................................ -55 ~ +150 °C  
Junction Temperature.................................................................................................... +150 °C  
Maximum Power Dissipation  
Total Power Dissipation (Tc=25°C) ..................................................................................... 20 W  
Maximum Voltages and Currents (Ta=25°C)  
BVCBO Collector to Base Voltage..................................................................................... 100 V  
BVCEO Collector to Emitter Voltage.................................................................................. 100 V  
BVEBO Emitter to Base Voltage............................................................................................ 5 V  
IC Collector Current............................................................................................................... 5 A  
Characteristics (Ta=25°C)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
BVCBO  
BVCEO  
BVEBO  
ICBO  
ICEO  
IEBO  
*VCE(sat)1  
*VCE(sat)2  
*VBE(sat)  
*VBE(on)  
*hFE1  
100  
100  
5
-
-
-
-
-
-
-
1
100  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10  
10  
2
2
4
4.5  
2.8  
12  
-
V
V
V
uA  
uA  
mA  
V
V
V
V
K
IC=1mA  
IC=30mA  
IE=1mA  
VCB=100V  
VCE=50V  
VEB=5V  
IC=4A, IB=16mA  
IC=8A, IB=80mA  
IC=8A, IB=80mA  
VCE=4V, IC=4A  
VCE=4V, IC=4A  
VCE=4V, IC=8A  
VCB=10V  
*hFE2  
Cob  
200  
pF  
*Pulse Test: Pulse Width 380us, Duty Cycle2%  
HJ122  
HSMC Product Specification  

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