Datasheet > HJ112

HJ112

更新时间： 2024-09-14 22:33:31

品牌	Logo	应用领域
HSMC		晶体连接器连接器支架晶体管局域网
页数	文件大小	规格书
4页	45K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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HJ112 数据手册

Spec. No. : HE6030

Issued Date : 1998.07.01

Revised Date : 2002.08.13

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

HJ112

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HJ112 is designed for use in general purpose amplifier and low-

speed switching applications.

TO-252

Absolute Maximum Ratings (Ta=25°C)

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature...................................................................................... 150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25°C)..................................................................................... 20 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ....................................................................................... 100 V

VCEO Collector to Emitter Voltage.................................................................................... 100 V

VEBO Emitter to Base Voltage.............................................................................................. 5 V

IC Collector Current .............................................................................................................. 4 A

Characteristics (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

ICBO

ICEO

IEBO

*VCE(sat)1

*VBE(on)

*hFE1

100

500

200

2.5

2.8

IC=1mA

IC=30mA

VCB=80V

VCE=50V

IC=2A, IB=8mA

IC=2A, VCE=3V

IC=0.5A, VCE=3V

IC=2A, VCE=3V

IC=4A, VCE=3V

VCB=10V

*hFE2

*hFE3

Cob

100

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HJ112

HSMC Product Specification

12 3 4

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