Datasheet > HJ1109

HJ1109

更新时间： 2024-09-14 22:33:31

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
3页	34K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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数据手册

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HJ1109 数据手册

Spec. No. : HE6019-B

Issued Date : 1996.04.15

Revised Date : 2000.11.01

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HJ1109

PNP EPITAXIAL PLANAR TRANSISTOR

Description

• Low frequency high voltage amplifier.

• Complementary pair with HJ1609.

(Ta=25°C)

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature .................................................................................................... +150 °C

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ................................................................................. 1.25 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage................................................................................... -160 V

BVCES Collector to Emitter Voltage ................................................................................ -160 V

BVEBO Emitter to Base Voltage.......................................................................................... -5 V

IC Collector Current...................................................................................................... -100 mA

(Ta=25°C)

Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=-10uA, IE=0

IC=-1mA , IB=0

BVCBO

BVCEO

BVEBO

ICBO

*VCE(sat)

VBE

*hFE1

*hFE2

-160

-5

IE=-10uA, IC=0

-10

-2

-1.5

320

VCB=-140V, IE=0

IC=-30mA, IB=-3mA

VCE=-5V, IC=-10mA

VCE=-5V, IC=-1mA

VCE=-5V, IC=-10mA

VCB=-10V, f=1MHz

140

5.5

MHz

Cob

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

Classification Of hFE1

Rank

Range

60-120

100-200

160-320

HSMC Product Specification

12 3

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