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HMC641 PDF预览

HMC641

更新时间: 2024-02-06 21:09:17
品牌 Logo 应用领域
HITTITE 射频和微波开关射频开关微波开关分离技术隔离技术
页数 文件大小 规格书
6页 163K
描述
GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 18 GHz

HMC641 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active针数:24
Reach Compliance Code:compliant风险等级:5.3
其他特性:HIGH ISOLATION特性阻抗:50 Ω
构造:COMPONENT最大输入功率 (CW):16.99 dBm
最大工作频率:20000 MHz最小工作频率:100 MHz
最高工作温度:125 °C最低工作温度:-55 °C
射频/微波设备类型:DIVERSITY SWITCHBase Number Matches:1

HMC641 数据手册

 浏览型号HMC641的Datasheet PDF文件第2页浏览型号HMC641的Datasheet PDF文件第3页浏览型号HMC641的Datasheet PDF文件第4页浏览型号HMC641的Datasheet PDF文件第5页浏览型号HMC641的Datasheet PDF文件第6页 
HMC641  
v01.0108  
GaAs MMIC SP4T NON-REFLECTIVE  
SWITCH, DC - 18 GHz  
Typical Applications  
The HMC641 is ideal for:  
• Telecom Infrastructure  
• Microwave Radio & VSAT  
• Military & Space Hybrids  
• Test Instrumentation  
Features  
Broadband Performance: DC - 18 GHz  
High Isolation: 42 dB @ 12 GHz  
Low Insertion Loss: 2.1 dB @ 12 GHz  
Integrated 2:4 TTL Decoder  
Small Size: 1.92 x 1.60 x 0.10 mm  
4
General Description  
Functional Diagram  
The HMC641 is a broadband non-reflective GaAs  
PHEMT SP4T switch chip. Covering DC to 18 GHz,  
this switch offers high isolation and low insertion  
loss and extends the frequency coverage of Hittite’s  
SP4T switch product line. This switch also includes  
an on board binary decoder circuit which reduces  
the number of required logic control lines to two. The  
switch operates using a negative control voltage of  
0/-5V, and requires a fixed Vss bias of -5V. All data  
is tested with the chip in a 50 Ohm test fixture con-  
nected via one 3.0 x 0.5 mil gold ribbon of minimal  
length on each RF port.  
Electrical Specifications, TA = +25° C, With 0/-5V Control, Vss= -5V, 50 Ohm System  
Parameter  
Frequency  
Min.  
Typ.  
Max.  
Units  
DC - 12 GHz  
DC - 18 GHz  
1.8  
2.8  
2.1  
3.1  
dB  
dB  
Insertion Loss  
DC - 12 GHz  
DC - 18 GHz  
39  
37  
42  
40  
dB  
dB  
Isolation (RFC to RF1 - RF4)  
Return Loss  
DC - 12 GHz  
DC - 18 GHz  
12  
11  
15  
14  
dB  
dB  
“On State”  
“Off State”  
Return Loss  
DC - 18 GHz  
2.05- 18 GHz  
12  
21  
15  
24  
dB  
Input Power for 1 dB Compression  
dBm  
Input Third Order Intercept  
(Two-Tone Input Power= +14 dBm Each Tone)  
0.05 - 18 GHz  
DC - 18GHz  
37  
40  
dBm  
Switching Characteristics  
tRISE, tFALL (10/90% RF)  
tON, tOFF (50% CTL to 10/90% RF)  
14  
95  
ns  
ns  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
4 - 38  

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