HMC632LP5TR

更新时间： 2024-01-29 06:10:47

品牌	Logo	应用领域
HITTITE		振荡器压控振荡器输出元件
页数	文件大小	规格书
6页	405K
描述
Voltage Controlled Oscillator, 14250MHz Min, 15650MHz Max, PLASTIC, LEADLESS, QFN-32

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数据手册

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HMC632LP5TR 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Transferred	Reach Compliance Code：	compliant
风险等级：	5.65	Is Samacsys：	N
其他特性：	TAPE AND REEL	最大控制电压：	13 V
最小控制电压：	2 V	JESD-609代码：	e0
安装特点：	SURFACE MOUNT	偏移频率：	100 kHz
最大工作频率：	15650 MHz	最小工作频率：	14250 MHz
最高工作温度：	85 °C	最低工作温度：	-40 °C
振荡器类型：	VOLTAGE CONTROLLED OSCILLATOR	输出功率：	4 dBm
相位噪声：	-107 dBc/Hz	物理尺寸：	5.1mm x 5.1mm x 1.0mm
最大压摆率：	400 mA	最大供电电压：	5.25 V
最小供电电压：	4.75 V	标称供电电压：	5 V
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

HMC632LP5TR 数据手册

HMC632LP5 / 632LP5E

v03.0811

MMIC VCO w/ HALF FREQUENCY OUTPUT

& DIVIDE-BY-4, 14.25 - 15.65 GHz

Typical Applications

The HMC632LP5(E) is ideal for:

• Point to Point/Multipoint Radio

• Test Equipment & Industrial Controls

• SATCOM

Features

Dual Output: Fo = 14.25 - 15.65 GHz

Fo/2 = 7.125 - 7.825 GHz

Pout: +9 dBm

Phase Noise: -107 dBc/Hz @100 kHz Typ.

No External Resonator Needed

32 Lead 5x5mm SMT Package: 25mm²

• Military End-Use

Functional Diagram

General Description

The HMC632LP5(E) is a GaAs InGaP Heterojunc-

tion Bipolar Transistor (HBT) MMIC VCO. The

HMC632LP5(E) integrates resonators, negative resis-

tance devices, varactor diodes and features half-

frequency and divide-by-4 outputs. The VCO’s phase

noise performance is excellent over temperature,

shock, and process due to the oscillator’s monolithic

structure. Power output is +9 dBm typical from a +5V

supply voltage. The prescaler and RF/2 functions can

be disabled to conserve current if not required. The

voltage controlled oscillator is packaged in a leadless

QFN 5x5 mm surface mount package, and requires no

external matching components.

Electrical Speciﬁcations, T_A= +25° C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V

Parameter

Min.

Typ.

Max.

Units

Fo/2

14.25 - 15.65

7.125 - 7.825

GHz

Frequency Range

Power Output

RFOUT

RFOUT/2

RFOUT/4

-8

-2

dBm

SSB Phase Noise @ 100 kHz Offset,

Vtune= +5V @ RFOUT

-107

dBc/Hz

Tune Voltage

Vtune

400

Supply Current

Icc(Dig) + Icc(Amp) + Icc(RF)

280

350

µA

Tune Port Leakage Current (Vtune= 13V)

Output Return Loss

Harmonics/Subharmonics

1/2

2nd

dBc

Pulling (into a 2.0:1 VSWR)

Pushing @ Vtune= 5V

Frequency Drift Rate

1.0

MHz pp

MHz/V

MHz/°C

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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