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HMC582LP5E PDF预览

HMC582LP5E

更新时间: 2024-01-03 08:12:14
品牌 Logo 应用领域
HITTITE 输出元件
页数 文件大小 规格书
8页 322K
描述
MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 11.1 - 12.4 GHz

HMC582LP5E 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:PLASTIC, LEADLESS, QFN-32
针数:32Reach Compliance Code:not_compliant
风险等级:5其他特性:TAPE AND REEL
最大控制电压:12 V最小控制电压:2 V
JESD-609代码:e0安装特点:SURFACE MOUNT
偏移频率:100 kHz最大工作频率:12400 MHz
最小工作频率:11100 MHz最高工作温度:85 °C
最低工作温度:-40 °C振荡器类型:VOLTAGE CONTROLLED OSCILLATOR
输出功率:5 dBm相位噪声:-110 dBc/Hz
物理尺寸:5.1mm x 5.1mm x 1.0mm最大压摆率:390 mA
最大供电电压:5.25 V最小供电电压:4.75 V
标称供电电压:5 V表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

HMC582LP5E 数据手册

 浏览型号HMC582LP5E的Datasheet PDF文件第2页浏览型号HMC582LP5E的Datasheet PDF文件第3页浏览型号HMC582LP5E的Datasheet PDF文件第4页浏览型号HMC582LP5E的Datasheet PDF文件第5页浏览型号HMC582LP5E的Datasheet PDF文件第6页浏览型号HMC582LP5E的Datasheet PDF文件第7页 
HMC582LP5 / 582LP5E  
v00.0407  
MMIC VCO w/ HALF FREQUENCY OUTPUT  
& DIVIDE-BY-4, 11.1 - 12.4 GHz  
Typical Applications  
Features  
Low noise MMIC VCO w/Half Frequency, Divide-by-4  
Outputs for:  
Triple Output: Fo = 11.1 - 12.4 GHz  
Fo/2 = 5.55 - 6.2 GHz  
Fo/4 = 2.78 - 3.1 GHz  
• Point to Point/Multipoint Radio  
• Test Equipment & Industrial Controls  
• SATCOM  
Pout: +9 dBm  
Phase Noise: -110 dBc/Hz @100 kHz Typ.  
No External Resonator Needed  
QFN Leadless SMT Package, 25 mm2  
• Military End-Use  
Functional Diagram  
General Description  
The HMC582LP5 & HMC582LP5E are GaAs InGaP  
Heterojunction Bipolar Transistor (HBT) MMIC VCOs.  
The HMC582LP5 & HMC582LP5E integrate resona-  
tors, negative resistance devices, varactor diodes  
and feature half frequency and divide-by-4 outputs.  
The VCO’s phase noise performance is excellent over  
temperature, shock, and process due to the oscillator’s  
monolithic structure. Power output is +9 dBm typical  
from a +5V supply voltage. The prescaler and RF/2  
functions can be disabled to conserve current if not  
required. The voltage controlled oscillator is packaged  
in a leadless QFN 5x5 mm surface mount package,  
and requires no external matching components.  
10  
Electrical Specifications, TA = +25° C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V  
Parameter  
Min.  
Typ.  
Max.  
Units  
Fo  
Fo/2  
11.1 - 12.4  
5.55 - 6.2  
GHz  
GHz  
Frequency Range  
Power Output  
RFOUT  
RFOUT/2  
RFOUT/4  
+5  
+8  
-9  
+12  
+14  
-3  
dBm  
dBm  
dBm  
SSB Phase Noise @ 100 kHz Offset,  
Vtune= +5V @ RFOUT  
-110  
dBc/Hz  
Tune Voltage  
Vtune  
2
12  
390  
10  
V
Supply Current  
Icc(Dig) + Icc(Amp) + Icc(RF)  
290  
350  
2
mA  
μA  
dB  
Tune Port Leakage Current (Vtune= 13V)  
Output Return Loss  
Harmonics/Subharmonics  
1/2  
2nd  
3rd  
32  
25  
30  
dBc  
dBc  
dBc  
Pulling (into a 2.0:1 VSWR)  
Pushing @ Vtune= 5V  
Frequency Drift Rate  
5
MHz pp  
MHz/V  
MHz/°C  
30  
1.2  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
10 - 228  

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