HMC358MS8G

更新时间： 2024-02-25 18:37:48

品牌	Logo	应用领域
HITTITE		振荡器压控振荡器缓冲放大器
页数	文件大小	规格书
6页	186K
描述
MMIC VCO w/ BUFFER AMPLIFIER, 5.8 - 6.8 GHz

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技术参数
数据手册

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HMC358MS8G 技术参数

是否Rohs认证：	不符合	生命周期：	Contact Manufacturer
包装说明：	PLASTIC, SMT, MSOP8G, 8 PIN	Reach Compliance Code：	compliant
风险等级：	5.65	其他特性：	TAPE AND REEL
最大控制电压：	10 V	最小控制电压：
JESD-609代码：	e0	安装特点：	SURFACE MOUNT
偏移频率：	100 kHz	最大工作频率：	6800 MHz
最小工作频率：	5800 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	振荡器类型：	VOLTAGE CONTROLLED OSCILLATOR
输出功率：	8 dBm	相位噪声：	-110 dBc/Hz
物理尺寸：	3.1mm x 3.1mm x 1.1mm	最大压摆率：	100 mA
最大供电电压：	3.25 V	最小供电电压：	2.75 V
标称供电电压：	3 V	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

HMC358MS8G 数据手册

HMC358MS8G

v02.0202

MICROWAVE CORPORATION

MMIC VCO w/ BUFFER

AMPLIFIER, 5.8 - 6.8 GHz

Typical Applications

Features

Low noise MMIC VCO w/Buffer Ampliﬁer

for C-Band applications such as:

Pout: +11 dBm

Phase Noise: -110 dBc/Hz @100 KHz

No External Resonator Needed

Single Supply: 3V @ 100 mA

15mm²MSOP8G SMT Package

• UNII & Pt. to Pt. Radios

• 802.11a & HiperLAN WLAN

• VSAT Radios

Functional Diagram

General Description

The HMC358MS8G is a GaAs InGaP Hetero-

junction Bipolar Transistor (HBT) MMIC VCO.The

HMC358MS8G integrates a resonator, negative

resistance device, varactor diode, and buffer

ampliﬁer. The VCO’s phase noise performance is

excellent over temperature, shock, and process

due to the oscillator’s monolithic structure. Power

output is 11 dBm typical from a 3.0V supply volt-

age.The voltage controlled oscillator is packaged

in a low cost, surface mount 8 lead MSOP pack-

age with an exposed base for improved RF and

thermal performance.

Electrical Speciﬁcations,T_A= +25° C, Vcc = +3V

Parameter

Min.

Typ.

5.8 - 6.8

Max.

Units

GHz

dBm

dBc/Hz

Frequency Range

Power Output

SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output

Tune Voltage (Vtune)

-110

Supply Current (Icc)

100

Tune Port Leakage Current (Vtune= 10V)

Output Return Loss

µA

Harmonics

2nd

3rd

-10

-20

Pulling (into a 2.0:1 VSWR)

Pushing @ Vtune= +3V

Frequency Drift Rate

150

0.8

MHz pp

MHz/V

MHz/°C

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

15 - 2

12 3 4 5 6

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