5秒后页面跳转
HMC349MS8G PDF预览

HMC349MS8G

更新时间: 2024-01-02 23:00:20
品牌 Logo 应用领域
HITTITE 射频和微波开关射频开关微波开关光电二极管分离技术隔离技术
页数 文件大小 规格书
6页 211K
描述
HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz

HMC349MS8G 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.69
射频/微波设备类型:SPDTBase Number Matches:1

HMC349MS8G 数据手册

 浏览型号HMC349MS8G的Datasheet PDF文件第2页浏览型号HMC349MS8G的Datasheet PDF文件第3页浏览型号HMC349MS8G的Datasheet PDF文件第4页浏览型号HMC349MS8G的Datasheet PDF文件第5页浏览型号HMC349MS8G的Datasheet PDF文件第6页 
HMC349MS8G  
v00.0304  
MICROWAVE CORPORATION  
HIGH ISOLATION SPDT  
NON-REFLECTIVE SWITCH, DC - 4.0 GHz  
Typical Applications  
Features  
High Isolation: 70 dB @ 1 GHz  
57 dB @ 2 GHz  
The HMC349MS8G is ideal for:  
• Basestation Infrastructure  
• MMDS & 3.5 GHz WLL  
• CATV/CMTS  
Single Positive Control: 0/+5V  
+52 dBm Input IP3  
Non-Reflective Design  
Test Instrumentation  
All Off State  
Ultra Small MS8G SMT Package: 14.8 mm2  
Functional Diagram  
General Description  
The HMC349MS8G is a high isolation non-  
reflective DC to 4 GHz GaAs MESFET SPDT  
switch in a low cost 8 lead MSOP8G surface  
mount package with an exposed ground paddle.  
The switch is ideal for cellular/PCS/3G basestation  
applications yielding 50 to 60 dB isolation, low 0.8  
dB insertion loss and +52 dBm input IP3. Power  
handling is excellent up through the 3.5 GHz WLL  
band with the switch offering a P1dB compression  
point of +31 dBm. On-chip circuitry allows a  
single positive voltage control of 0/+5 Volts at very  
low DC currents. An enable input (EN) set to logic  
high will put the switch in an “all off” state.  
14  
Electrical Specifications,TA = +25° C, Vctl = 0/+5 Vdc, Vdd = +5 Vdc, 50 Ohm System  
Parameter  
Frequency  
Min.  
Typ.  
Max.  
Units  
DC - 1.0 GHz  
DC - 2.0 GHz  
DC - 3.0 GHz  
DC - 4.0 GHz  
0.8  
0.9  
1.2  
1.8  
1.1  
1.2  
1.5  
2.1  
dB  
dB  
dB  
dB  
Insertion Loss  
DC - 1.0 GHz  
DC - 2.0 GHz  
DC - 3.0 GHz  
DC - 4.0 GHz  
60  
54  
45  
42  
70  
57  
50  
47  
dB  
dB  
dB  
dB  
Isolation (RFC to RF1/RF2)  
DC - 1.0 GHz  
DC - 2.0 GHz  
DC - 3.0 GHz  
DC - 4.0 GHz  
23  
18  
13  
8
dB  
dB  
dB  
dB  
Return Loss (On State)  
Return Loss (Off State)  
0.5 - 2.0 GHz  
0.5 - 3.0 GHz  
0.5 - 4.0 GHz  
20  
17  
14  
dB  
dB  
dB  
Input Power for 1 dB Compression  
0.25 - 4.0 GHz  
27  
31  
dBm  
0.25 - 1.0 GHz  
1.0 - 2.0 GHz  
2.0 - 3.0 GHz  
3.0 - 4.0 GHz  
53  
50  
49  
47  
dBm  
dBm  
dBm  
dBm  
Input Third Order Intercept  
(Two-Tone Input Power = +7 dBm Each Tone)  
Switching Speed  
DC - 4.0 GHz  
tRISE, tFALL (10/90% RF)  
tON, tOFF (50% CTL to 10/90% RF)  
40  
120  
ns  
ns  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order Online at www.hittite.com  
14 - 230  

与HMC349MS8G相关器件

型号 品牌 描述 获取价格 数据表
HMC349MS8G_07 HITTITE HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz

获取价格

HMC349MS8G_08 HITTITE HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz

获取价格

HMC349MS8GE HITTITE HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz

获取价格

HMC349MS8GETR HITTITE 暂无描述

获取价格

HMC349MS8GTR HITTITE SPDT,

获取价格

HMC350MS8 HITTITE GaAs MMIC HIGH IP3 SINGLEBALANCED MIXER, 0.6 - 1.2 GHz

获取价格