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HMC345LP3

更新时间: 2024-02-26 00:02:29
品牌 Logo 应用领域
HITTITE 射频和微波开关射频开关微波开关分离技术隔离技术
页数 文件大小 规格书
6页 206K
描述
GaAs MMIC SP4T NON-REFLECTIVE POSITIVE CONTROL SWITCH, DC - 8.0 GHz

HMC345LP3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:compliant
风险等级:8.62其他特性:HIGH ISOLATION
特性阻抗:50 Ω构造:COMPONENT
最大输入功率 (CW):23.98 dBm最大插入损耗:2.9 dB
JESD-609代码:e3最大工作频率:8000 MHz
最小工作频率:最高工作温度:85 °C
最低工作温度:-40 °C射频/微波设备类型:SP4T
端子面层:Matte Tin (Sn)

HMC345LP3 数据手册

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HMC345LP3  
v03.0604  
MICROWAVE CORPORATION  
GaAs MMIC SP4T NON-REFLECTIVE  
POSITIVE CONTROL SWITCH, DC* - 8.0 GHz  
Typical Applications  
Features  
This switch is suitable for usage in DC - 8.0 GHz  
50-Ohm or 75-Ohm systems:  
Broadband Performance: DC - 8.0 GHz  
High Isolation: 35 dB@ 6 GHz  
Broadband  
Low Insertion Loss: 2.2 dB@ 6 GHz  
Integrated Positive Supply 2:4 TTL Decoder  
3 mm x 3 mm x 1 mm SMT Package  
Fiber Optics  
Switched Filter Banks  
Wireless below 8 GHz  
Functional Diagram  
General Description  
The HMC345LP3 is a broadband non-reflective  
GaAs MESFET SP4T switch in a low cost lead-  
less surface mount package. Covering DC to 8  
GHz, this switch offers high isolation and low  
insertion loss. This switch also includes an on  
board binary decoder circuit which reduces the  
required logic control lines to two. The switch  
operates using a positive control voltage of 0/+5V,  
and requires a fixed bias of +5V.  
14  
* Blocking capacitors are required at ports RFC and  
RF1, 2, 3, & 4. Their value will determine the lowest  
transmission frequency.  
Electrical Specifications,TA = +25° C, With 0/+5V Control, 50 Ohm System  
Parameter  
Frequency  
Min.  
Typ.  
Max.  
Units  
DC - 2.0 GHz  
DC - 6.0 GHz  
DC - 8.0 GHz  
2.0  
2.2  
2.4  
2.4  
2.6  
2.9  
dB  
dB  
dB  
Insertion Loss  
Isolation  
DC - 2.0 GHz  
DC - 4.0 GHz  
DC - 6.0 GHz  
DC - 8.0 GHz  
37  
32  
31  
27  
42  
37  
35  
32  
dB  
dB  
dB  
dB  
DC - 2.0 GHz  
DC - 4.0 GHz  
DC - 6.0 GHz  
DC - 8.0 GHz  
10  
8
7
13  
11  
10  
9
dB  
dB  
dB  
dB  
Return Loss  
“On State”  
“Off State”  
6
Return Loss (RF1 - RF4)  
2.0 - 8.0 GHz  
2.0 - 8.0 GHz  
6
10  
21  
dB  
Input Power for 1 dB Compression  
Input Third Order Intercept  
17  
dBm  
2.0 - 8.0 GHz  
DC - 8.0 GHz  
37  
45  
dBm  
(Two-Tone Input Power = +7 dBm Each Tone, 1MHz Tone Separation)  
Switching Characteristics  
tRISE, tFALL (10/90% RF)  
tON, tOFF (50% CTL to 10/90% RF)  
50  
120  
ns  
ns  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order Online at www.hittite.com  
14 - 194  

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