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HMC232LP4ETR PDF预览

HMC232LP4ETR

更新时间: 2024-02-01 00:33:12
品牌 Logo 应用领域
HITTITE 射频和微波开关射频开关微波开关光电二极管
页数 文件大小 规格书
6页 330K
描述
SPDT, 0MHz Min, 12000MHz Max, 1 Func, 3.1dB Insertion Loss-Max, GAAS, 4 X 4 MM, ROHS COMPLIANT, PLASTIC, SMT, QFN-24

HMC232LP4ETR 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete针数:24
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.12
1dB压缩点:27 dBm最大插入损耗:3.1 dB
最小隔离度:37 dBJESD-609代码:e0
安装特点:SURFACE MOUNT功能数量:1
端子数量:24准时:0.006 µs
最大工作频率:12000 MHz最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:LCC24,.16SQ,20射频/微波设备类型:SPDT
子类别:RF/Microwave Switches表面贴装:YES
技术:GAAS端子面层:Tin/Lead (Sn85Pb15)
Base Number Matches:1

HMC232LP4ETR 数据手册

 浏览型号HMC232LP4ETR的Datasheet PDF文件第2页浏览型号HMC232LP4ETR的Datasheet PDF文件第3页浏览型号HMC232LP4ETR的Datasheet PDF文件第4页浏览型号HMC232LP4ETR的Datasheet PDF文件第5页浏览型号HMC232LP4ETR的Datasheet PDF文件第6页 
HMC232LP4 / 232LP4E  
v03.0805  
GaAs MMIC SPDT NON-REFLECTIVE  
SWITCH, DC - 12.0 GHz  
Designer’s Kit  
Available  
Typical Applications  
Features  
The HMC232LP4 / HMC232LP4E is ideal for:  
• Telecom Infrastructure  
Isolation: 60 dB @ 3 GHz  
52 dB @ 6 GHz  
+27 dBm Input P1dB  
• Microwave Radio & VSAT  
Insertion Loss: 1.5 dB Typical @ 6 GHz  
Non-Reflective Design  
• Military Radios, Radar & ECM  
• Test Instrumentation  
4x4 mm QFN SMT Package  
Included in the HMC-DK005 Designer’s Kit  
8
General Description  
Functional Diagram  
The HMC232LP4 & HMC232LP4E are broadband high  
isolation non-reflective GaAs MESFET SPDT switches  
in low cost leadless QFN surface mount plastic pack-  
ages. Covering DC to 12 GHz, the switch features >60  
dB isolation up to 3 GHz and >42 dB isolation up to  
12 GHz. Input P1dB compression is +27 dBm typical,  
while input IP3 is +50 dBm. The switch operates using  
complementary negative control voltage logic lines of  
-5/0V and requires no bias supply.  
Electrical Specifications, TA = +25° C, With 0/-5V Control, 50 Ohm System  
Parameter  
Frequency  
Min.  
Typ.  
Max.  
Units  
DC - 3.0 GHz  
DC - 6.0 GHz  
DC - 9.0 GHz  
DC - 12.0 GHz  
1.4  
1.5  
2.0  
2.7  
1.7  
1.8  
2.3  
3.1  
dB  
dB  
dB  
dB  
Insertion Loss  
DC - 3.0 GHz  
DC - 6.0 GHz  
DC - 9.0 GHz  
DC - 12.0 GHz  
55  
47  
40  
37  
60  
52  
45  
42  
dB  
dB  
dB  
dB  
Isolation  
DC - 6.0 GHz  
DC - 9.0 GHz  
DC - 12.0 GHz  
18  
16  
11  
dB  
dB  
dB  
Return Loss  
“On State”  
“Off State”  
Return Loss RF1, RF2  
DC - 12.0 GHz  
0.5 - 12.0 GHz  
14  
27  
dB  
Input Power for 1 dB Compression  
Input Third Order Intercept  
24  
45  
dBm  
0.5 - 12.0 GHz  
DC - 12.0 GHz  
50  
dBm  
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)  
Switching Characteristics  
tRISE, tFALL (10/90% RF)  
tON, tOFF (50% CTL to 10/90% RF)  
3
6
ns  
ns  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
8 - 78  

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