HMC216MS8 / 216MS8E
v02.0705
GaAs MMIC SMT DOUBLE-BALANCED FET
MIXER, 1.3 - 2.5 GHz
Typical Applications
Features
The HMC216MS8 / HMC216MS8E is ideal for:
IP3 (Input): +25 dBm @ +11 dBm LO
LO Range = +3 to +11 dBm
Conversion Loss: 8.5 dB
LO / RF Isolation: 32 dB
• Base Stations
• WirelessLAN
7
• PCMCIA
• Portable Wireless
Functional Diagram
General Description
The HMC216MS8 & HMC216MS8E are ultra min-
iature double-balanced FET mixers in 8 lead plastic
surface mount packages (MSOP). This MMIC mixer is
constructed of switched GaAs FETs and novel planar
transformer baluns on the chip. In addition to an LO
drive of +3 to +13 dBm, a gate voltage of Vgg = -0.9
to -1.6 Vdc is required. The device can be used as an
upconverter or downconverter for 1900 or 2400 MHz
applications. The consistent MMIC performance will
improve system operation and assure regulatory com-
pliance.
Electrical Specifications, TA = +25° C, As a Function of LO Drive, Vgg = -1.2 Vdc
LO = +11 dBm
LO = +7 dBm
Typ.
LO = +3 dBm
Parameter
Units
Min.
Typ.
Max.
Min.
Max.
Min.
Typ.
Max.
Frequency Range, RF & LO
Frequency Range, IF
Conversion Loss
1.3 - 2.5
1.6 - 2.3
DC - 0.5
8.5
1.7 - 2.0
GHz
GHz
dB
DC - 0.65
DC - 0.4
9
9
10.5
10.5
10
10
9
9
10.5
10.5
Noise Figure (SSB)
LO to RF Isolation
8.5
dB
27
17
30
20
27
17
32
27
17
32
20
dB
LO to IF Isolation
20
dB
IP3 (Input)
21
8
25
11
14
5
18
10
8
3
12
8
dBm
dBm
1 dB Gain Compression (Input)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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