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2SJ452 PDF预览

2SJ452

更新时间: 2024-02-22 18:36:49
品牌 Logo 应用领域
日立 - HITACHI /
页数 文件大小 规格书
8页 42K
描述
Silicon P-Channel MOS FET

2SJ452 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.29配置:SINGLE
最小漏源击穿电压:50 V最大漏极电流 (ID):0.2 A
最大漏源导通电阻:12 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SJ452 数据手册

 浏览型号2SJ452的Datasheet PDF文件第2页浏览型号2SJ452的Datasheet PDF文件第3页浏览型号2SJ452的Datasheet PDF文件第4页浏览型号2SJ452的Datasheet PDF文件第5页浏览型号2SJ452的Datasheet PDF文件第6页浏览型号2SJ452的Datasheet PDF文件第7页 
2SJ452  
Silicon P-Channel MOS FET  
ADE-208-383  
1st. Edition  
Application  
Low frequency power switching  
Features  
Low on-resistance.  
Low drive power  
2.5 V gate drive device.  
Small package (MPAK).  
Outline  
MPAK  
3
1
2
D
1. Source  
2. Gate  
G
3. Drain  
S

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