5秒后页面跳转
2SJ409(S)TR PDF预览

2SJ409(S)TR

更新时间: 2024-02-13 16:42:48
品牌 Logo 应用领域
日立 - HITACHI /
页数 文件大小 规格书
5页 31K
描述
Power Field-Effect Transistor, 20A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

2SJ409(S)TR 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.29配置:SINGLE
最小漏源击穿电压:100 V最大漏极电流 (ID):20 A
最大漏源导通电阻:0.22 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SJ409(S)TR 数据手册

 浏览型号2SJ409(S)TR的Datasheet PDF文件第2页浏览型号2SJ409(S)TR的Datasheet PDF文件第3页浏览型号2SJ409(S)TR的Datasheet PDF文件第4页浏览型号2SJ409(S)TR的Datasheet PDF文件第5页 
2SJ409(L), 2SJ409(S)  
Silicon P-Channel MOS FET  
Application  
High speed power switching  
Features  
Low on-resistance  
High speed switching  
Low drive current  
4 V Gate drive device can be driven from 5 V source  
Suitable for Switching regulator, DC - DC converter  
Outline  
LDPAK  
4
4
1
2
3
1
2
3
D
G
1. Gate  
2. Drain  
3. Source  
4. Drain  
S

与2SJ409(S)TR相关器件

型号 品牌 描述 获取价格 数据表
2SJ409L HITACHI Silicon P-Channel MOS FET

获取价格

2SJ409S HITACHI Silicon P-Channel MOS FET

获取价格

2SJ40B MITSUBISHI Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, PLASTIC

获取价格

2SJ40C MITSUBISHI Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, PLASTIC

获取价格

2SJ40D MITSUBISHI Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, PLASTIC

获取价格

2SJ40E MITSUBISHI Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, PLASTIC

获取价格