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2SJ246(S)TL PDF预览

2SJ246(S)TL

更新时间: 2024-02-04 08:36:15
品牌 Logo 应用领域
日立 - HITACHI /
页数 文件大小 规格书
7页 42K
描述
Power Field-Effect Transistor, 7A I(D), 30V, 0.31ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

2SJ246(S)TL 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N配置:Single
最大漏极电流 (Abs) (ID):7 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):20 W
子类别:Other Transistors表面贴装:NO
Base Number Matches:1

2SJ246(S)TL 数据手册

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2SJ246 L , 2SJ246 S  
SILICON P-CHANNEL MOS FET  
Application  
DPAK–1  
High speed power switching  
4
4
3
Features  
1
2
1
2
3
• Low on–resistance  
• High speed switching  
• Low drive current  
2, 4  
• 4V gate drive device can be driven from  
5V source.  
1
1. Gate  
2. Drain  
3. Source  
4. Drain  
• Suitable for Switching regulator, DC – DC  
converter  
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Ratings  
Unit  
———————————————————————————————————————————  
Drain to source voltage  
V
–30  
V
DSS  
———————————————————————————————————————————  
Gate to source voltage  
V
±20  
V
GSS  
———————————————————————————————————————————  
Drain current  
I
–7  
A
D
———————————————————————————————————————————  
Drain peak current  
I
*
–28  
A
D(pulse)  
———————————————————————————————————————————  
Body–drain diode reverse drain current  
I
–7  
A
DR  
———————————————————————————————————————————  
Channel dissipation  
Pch**  
20  
W
———————————————————————————————————————————  
Channel temperature  
Tch  
150  
°C  
———————————————————————————————————————————  
Storage temperature  
Tstg  
–55 to +150  
°C  
———————————————————————————————————————————  
PW 10 µs, duty cycle 1 %  
** Value at Tc = 25 °C  
*

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