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2SJ245 PDF预览

2SJ245

更新时间: 2024-01-30 22:55:55
品牌 Logo 应用领域
日立 - HITACHI /
页数 文件大小 规格书
7页 42K
描述
SILICON P-CHANNEL MOS FET

2SJ245 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.32配置:SINGLE
最小漏源击穿电压:60 V最大漏极电流 (ID):5 A
最大漏源导通电阻:0.38 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON

2SJ245 数据手册

 浏览型号2SJ245的Datasheet PDF文件第2页浏览型号2SJ245的Datasheet PDF文件第3页浏览型号2SJ245的Datasheet PDF文件第4页浏览型号2SJ245的Datasheet PDF文件第5页浏览型号2SJ245的Datasheet PDF文件第6页浏览型号2SJ245的Datasheet PDF文件第7页 
2SJ245 L , 2SJ245 S  
SILICON P-CHANNEL MOS FET  
Application  
DPAK–1  
4
High speed power switching  
4
Features  
1
2
3
1
2
3
• Low on–resistance  
• High speed switching  
• Low drive current  
2, 4  
• 4 V Gate drive device can be driven  
from 5 V source  
• Suitable for Switching regulator, DC – DC  
converter  
1
1. Gate  
2. Drain  
3. Source  
4. Drain  
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Ratings  
Unit  
———————————————————————————————————————————  
Drain to source voltage  
V
–60  
V
DSS  
———————————————————————————————————————————  
Gate to source voltage  
V
±20  
V
GSS  
———————————————————————————————————————————  
Drain current  
I
–5  
A
D
———————————————————————————————————————————  
Drain peak current  
I
*
–20  
A
D(pulse)  
———————————————————————————————————————————  
Body–drain diode reverse drain current  
I
–5  
A
DR  
———————————————————————————————————————————  
Channel dissipation  
Pch**  
20  
W
———————————————————————————————————————————  
Channel temperature  
Tch  
150  
°C  
———————————————————————————————————————————  
Storage temperature  
Tstg  
–55 to +150  
°C  
———————————————————————————————————————————  
PW 10 µs, duty cycle 1 %  
** Value at Tc=25°C  
*

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