生命周期: | Obsolete | 零件包装代码: | SIP |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.04 |
最大集电极电流 (IC): | 0.2 A | 集电极-发射极最大电压: | 200 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 100 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 300 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SA1810B | ETC | TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 200MA I(C) | TO-126 |
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2SA1810C | ETC | TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 200MA I(C) | TO-126 |
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2SA1811 | TOSHIBA | TRANSISTOR (LOW FREQUENCY, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS |
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2SA1811TPE6 | TOSHIBA | TRANSISTOR 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa |
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2SA1812 | TYSEMI | High breakdown voltage. Low saturation voltage.Collector-base voltage VCBO -400 V |
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2SA1812 | ROHM | High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A) |
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