生命周期: | Transferred | 零件包装代码: | TO-92 |
包装说明: | CYLINDRICAL, O-PBCY-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.51 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 200 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 100 |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SA1485RR | HITACHI | 暂无描述 |
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2SA1485TZ | RENESAS | 100mA, 200V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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2SA1486 | NEC | PNP SILICON POWER TRANSISTOR |
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2SA1486K | NEC | TRANSISTOR | BJT | PNP | 600V V(BR)CEO | 1A I(C) | TO-126 |
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2SA1486-K | NEC | Power Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, |
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2SA1486-K-AZ | NEC | Power Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, |
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