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2SA1468INB PDF预览

2SA1468INB

更新时间: 2024-02-24 14:33:13
品牌 Logo 应用领域
日立 - HITACHI 晶体晶体管光电二极管放大器
页数 文件大小 规格书
6页 33K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, MPAK-3

2SA1468INB 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.47最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:180 V配置:SINGLE
最小直流电流增益 (hFE):160JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

2SA1468INB 数据手册

 浏览型号2SA1468INB的Datasheet PDF文件第2页浏览型号2SA1468INB的Datasheet PDF文件第3页浏览型号2SA1468INB的Datasheet PDF文件第4页浏览型号2SA1468INB的Datasheet PDF文件第5页浏览型号2SA1468INB的Datasheet PDF文件第6页 
2SA1468  
Silicon PNP Epitaxial  
Application  
High voltage amplifier  
Outline  
MPAK  
3
1
1. Emitter  
2. Base  
3. Collector  
2

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